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Suñé, Jordi, Tous, Santi, Miranda, Enrique (2010) Gate stack insulator breakdown when the interface layer thickness is scaled toward zero. Applied Physics Letters, 97 (21). 213503pp. doi:10.1063/1.3514256

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Reference TypeJournal (article/letter/editorial)
TitleGate stack insulator breakdown when the interface layer thickness is scaled toward zero
JournalApplied Physics Letters
AuthorsSuñé, JordiAuthor
Tous, SantiAuthor
Miranda, EnriqueAuthor
Year2010 (November 22)Volume97
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.3514256Search in ResearchGate
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Mindat Ref. ID8588436Long-form Identifiermindat:1:5:8588436:0
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Full ReferenceSuñé, Jordi, Tous, Santi, Miranda, Enrique (2010) Gate stack insulator breakdown when the interface layer thickness is scaled toward zero. Applied Physics Letters, 97 (21). 213503pp. doi:10.1063/1.3514256
Plain TextSuñé, Jordi, Tous, Santi, Miranda, Enrique (2010) Gate stack insulator breakdown when the interface layer thickness is scaled toward zero. Applied Physics Letters, 97 (21). 213503pp. doi:10.1063/1.3514256
In(2010, November) Applied Physics Letters Vol. 97 (21) AIP Publishing

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Tous, Santi, Wu, Ernest Y., Miranda, Enrique, Suñé, Jordi (2011) A strong analogy between the dielectric breakdown of high-K gate stacks and the progressive breakdown of ultrathin oxides. Journal of Applied Physics, 109 (12). 124115pp. doi:10.1063/1.3592285
Miranda, Enrique, Suñé, Jordi (2001) Mesoscopic approach to the soft breakdown failure mode in ultrathin SiO2 films. Applied Physics Letters, 78 (2). 225-227 doi:10.1063/1.1339259
Cester, Andrea, Paccagnella, Alessandro, Suñé, Jordi, Miranda, Enrique (2001) Post-radiation-induced soft breakdown conduction properties as a function of temperature. Applied Physics Letters, 79 (9). 1336-1338 doi:10.1063/1.1398329
Miranda, E., Jiménez, D., Suñé, J. (2011) Progressive breakdown dynamics and entropy production in ultrathin SiO2 gate oxides. Applied Physics Letters, 98 (25). 253504pp. doi:10.1063/1.3602318
Suñé, Jordi, Wu, Ernest Y. (2005) Temperature-dependent transition to progressive breakdown in thin silicon dioxide based gate dielectrics. Applied Physics Letters, 86 (19). 193502pp. doi:10.1063/1.1925316
Wu, Ernest Y., Suñé, Jordi (2013) Generalized hydrogen release-reaction model for the breakdown of modern gate dielectrics. Journal of Applied Physics, 114 (1). 14103pp. doi:10.1063/1.4811460
Miranda, Enrique, Suñé, Jordi, Rodríguez, Rosana, Nafría, Montserrat, Martín, Ferran, Aymerich, Xavier (1999) Soft Breakdown in Ultrathin SiO2Layers: the Conduction Problem from a New Point of View. Japanese Journal of Applied Physics, 38. 2223-2226 doi:10.1143/jjap.38.2223
Long, Shibing, Lian, Xiaojuan, Cagli, Carlo, Cartoixà, Xavier, Rurali, Riccardo, Miranda, Enrique, Jiménez, David, Perniola, Luca, Liu, Ming, Suñé, Jordi (2013) Quantum-size effects in hafnium-oxide resistive switching. Applied Physics Letters, 102 (18). 183505pp. doi:10.1063/1.4802265
Miranda, Enrique, Suñé, Jordi, Oriols, Xavier (2001) Linear and non-linear conduction regimes in broken down gate oxides. Journal of Non-Crystalline Solids, 280 (1) 132-137 doi:10.1016/s0022-3093(00)00365-3
Suñé, J., Miranda, E., Nafría, M., Aymerich, X. (1999) Modeling the breakdown spots in silicon dioxide films as point contacts. Applied Physics Letters, 75 (7). 959-961 doi:10.1063/1.124566
Khosru, Quazi Deen Mohd, Nakajima, Anri, Yoshimoto, Takashi, Yokoyama, Shin (2001) Soft-breakdown-suppressed ultrathin atomic-layer-deposited silicon–nitride/SiO2 stack gate dielectrics for advanced complementary metal–oxide–semiconductor technology. Applied Physics Letters, 79 (21). 3488-3490 doi:10.1063/1.1420586
 
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