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Alberti, A., La Via, F., Rimini, E. (2002) Effects of N-induced heterogeneous nucleation and growth of cavities at the CoSi2/polycrystalline–silicon interface. Applied Physics Letters, 81 (1). 55-57 doi:10.1063/1.1488697

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Reference TypeJournal (article/letter/editorial)
TitleEffects of N-induced heterogeneous nucleation and growth of cavities at the CoSi2/polycrystalline–silicon interface
JournalApplied Physics Letters
AuthorsAlberti, A.Author
La Via, F.Author
Rimini, E.Author
Year2002 (July)Volume81
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.1488697Search in ResearchGate
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Mindat Ref. ID8532854Long-form Identifiermindat:1:5:8532854:5
GUID0
Full ReferenceAlberti, A., La Via, F., Rimini, E. (2002) Effects of N-induced heterogeneous nucleation and growth of cavities at the CoSi2/polycrystalline–silicon interface. Applied Physics Letters, 81 (1). 55-57 doi:10.1063/1.1488697
Plain TextAlberti, A., La Via, F., Rimini, E. (2002) Effects of N-induced heterogeneous nucleation and growth of cavities at the CoSi2/polycrystalline–silicon interface. Applied Physics Letters, 81 (1). 55-57 doi:10.1063/1.1488697
In(2002, July) Applied Physics Letters Vol. 81 (1) AIP Publishing

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Alberti, A., La Via, F., Ravesi, S., Rimini, E. (2001) Improvement of CoSi2 thermal stability by cavity formation. Applied Physics Letters, 79 (21). 3419-3421 doi:10.1063/1.1420785
Alberti, A., La Via, F., Spinella, C., Rimini, E. (1999) Structural relationship of polycrystalline cobalt silicide lines to (001) silicon substrate. Applied Physics Letters, 75 (19). 2924-2926 doi:10.1063/1.125191
Alberti, Alessandra, Spinella, Corrado, La Magna, Antonino, Rimini, Emanuele (2007) Nucleation and growth of NiSi from Ni2Si transrotational domains. Applied Physics Letters, 90 (5). 53507pp. doi:10.1063/1.2437058
Alberti, A., La Via, F., Raineri, V., Rimini, E. (1999) Thermal stability of cobalt silicide stripes on Si (001). Journal of Applied Physics, 86 (6). 3089-3095 doi:10.1063/1.371172
Alberti, Alessandra, Spinella, Corrado, La Magna, Antonino, Rimini, Emanuele (2007) Publisher's Note: “Nucleation and growth of NiSi from Ni2Si transrotational domains” [Appl. Phys. Lett. 90, 053507 (2007)]. Applied Physics Letters, 90 (11). 119901pp. doi:10.1063/1.2718390
Severino, A., La Magna, A., Anzalone, R., Bongiorno, C., Rimini, E., La Via, F. (2007) Effect of Mo interlayer on thermal stability of polycrystalline NiSi thin films. Journal of Applied Physics, 101 (6). 63544pp. doi:10.1063/1.2714490
Benyaïch, F., Rimini, E., Spinella, C., Cacciato, A., Fallico, G., Ferla, G., Ward, P. (1993) Size effects in the epitaxial realignment of polycrystalline silicon films onto Si substrates. Applied Physics Letters, 62 (16). 1895-1897 doi:10.1063/1.109535
Privitera, S., La Via, F., Quilici, S., Meinardi, F., Grimaldi, M. G., Rimini, E. (2002) “Direct” measurement of the growth rate during the C49 to C54 transformation in TiSi2: Activation energy. Journal of Applied Physics, 92 (1). 627-628 doi:10.1063/1.1483109
La Via, F., Spinella, C., Rimini, E. (1993) Diffusion and precipitation of As from a CoSi2 diffusion source. Applied Surface Science, 73. 175-181 doi:10.1016/0169-4332(93)90163-6
La Ferla, A., Rimini, E., Ferla, G. (1988) Ion‐induced epitaxial growth of chemical vapor deposited Si layers. Applied Physics Letters, 52 (9). 712-714 doi:10.1063/1.99355
Privitera, S., La Via, F., Spinella, C., Quilici, S., Borghesi, A., Meinardi, F., Grimaldi, M. G., Rimini, E. (2000) Nucleation and growth of C54 grains into C49 TiSi2 thin films monitored by micro-Raman imaging. Journal of Applied Physics, 88 (12). 7013-7019 doi:10.1063/1.1326469
 
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