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Das, N. C., Gollsneider, B., Newman, P., Chang, W. (2002) Lateral oxidation kinetics of AlxGa1−xAs layer by capacitance technique. Applied Physics Letters, 81 (9). 1600-1602 doi:10.1063/1.1502011

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Reference TypeJournal (article/letter/editorial)
TitleLateral oxidation kinetics of AlxGa1−xAs layer by capacitance technique
JournalApplied Physics Letters
AuthorsDas, N. C.Author
Gollsneider, B.Author
Newman, P.Author
Chang, W.Author
Year2002 (August 26)Volume81
Issue9
PublisherAIP Publishing
DOIdoi:10.1063/1.1502011Search in ResearchGate
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Mindat Ref. ID8534493Long-form Identifiermindat:1:5:8534493:2
GUID0
Full ReferenceDas, N. C., Gollsneider, B., Newman, P., Chang, W. (2002) Lateral oxidation kinetics of AlxGa1−xAs layer by capacitance technique. Applied Physics Letters, 81 (9). 1600-1602 doi:10.1063/1.1502011
Plain TextDas, N. C., Gollsneider, B., Newman, P., Chang, W. (2002) Lateral oxidation kinetics of AlxGa1−xAs layer by capacitance technique. Applied Physics Letters, 81 (9). 1600-1602 doi:10.1063/1.1502011
In(2002, August) Applied Physics Letters Vol. 81 (9) AIP Publishing

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Chen, E. I., Holonyak, N., Maranowski, S. A. (1995) AlxGa1−xAs–GaAs metal–oxide semiconductor field effect transistors formed by lateral water vapor oxidation of AlAs. Applied Physics Letters, 66 (20). 2688-2690 doi:10.1063/1.113489
Deppe, D. G., Holonyak, N., Hsieh, K. C., Gavrilovic, P., Stutius, W., Williams, J. (1987) Layer interdiffusion in Se‐doped AlxGa1−xAs‐GaAs superlattices. Applied Physics Letters, 51 (8). 581-583 doi:10.1063/1.98354
Gao, G. B., Fan, Z. F., Teraguchi, N., Shen, T. C., Morkoç, H. (1993) AlxGa1−xAs/AlyGa1−yAs and GaAs pseudo‐heterojunction bipolar transistors with lateral emitter resistor. Applied Physics Letters, 62 (9). 994-996 doi:10.1063/1.108511
Kane, B. E., Eisenstein, J. P., Wegscheider, W., Pfeiffer, L. N., West, K. W. (1994) Separately contacted electron‐hole double layer in a GaAs/AlxGa1−xAs heterostructure. Applied Physics Letters, 65 (25). 3266-3268 doi:10.1063/1.112432
Miller, R. C., Tsang, W. T., Munteanu, O. (1982) Extrinsic layer at AlxGa1−xAs‐GaAs interfaces. Applied Physics Letters, 41 (4). 374-376 doi:10.1063/1.93504
Tsang, W. T., Logan, R. A. (1977) Lateral current confinement by reverse‐biased junctions in GaAs‐AlxGa1−xAs DH lasers. Applied Physics Letters, 30 (10). 538-540 doi:10.1063/1.89226
Izpura, I., Muñoz, E., Hill, G., Roberts, J., Pate, M. A., Mistry, P., Hall, N. Y. (1989) Capacitance properties in n‐type AlxGa1−xAs. Applied Physics Letters, 55 (23). 2414-2416 doi:10.1063/1.102031
Howarth, D. S., Feucht, D. L. (1973) Barrier determinations on Ge–AlxGa1−xAs and GaAs–AlxGa1−xAs p‐n heterojunctions. Applied Physics Letters, 23 (7). 365-367 doi:10.1063/1.1654921
Chang, K. L., Epple, J. H., Pickrell, G. W., Lin, H. C., Cheng, K. Y., Hsieh, K. C. (2000) Strain relaxation and defect reduction in InxGa1−xAs/GaAs by lateral oxidation of an underlying AlGaAs layer. Journal of Applied Physics, 88 (11). 6922-6924 doi:10.1063/1.1287766
Cheong, Hyeonsik M., Kim, Doseok, Hanna, Mark C., Mascarenhas, Angelo (2002) Effect of doping on photoluminescence upconversion in GaAs/AlxGa1−xAs heterostructures. Applied Physics Letters, 81 (1). 58-60 doi:10.1063/1.1491303
Voillot, F., Madhukar, A., Kim, J. Y., Chen, P., Cho, N. M., Tang, W. C., Newman, P. G. (1986) Observation of kinetically controlled monolayer step height distribution at normal and inverted interfaces in ultrathin GaAs/AlxGa1−xAs quantum wells. Applied Physics Letters, 48 (15). 1009-1011 doi:10.1063/1.96619
 
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