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Shao, Lin, Thompson, Phillip E., Bennett, Joe, Dharmaiahgari, Bhanu P., Trombetta, Len, Wang, Xuemei, Chen, Hui, Seo, Hye-Won, Chen, Quark Y., Liu, Jiarui, Chu, Wei-Kan (2003) Using point-defect engineering to increase stability of highly doped ultrashallow junctions formed by molecular-beam-epitaxy growth. Applied Physics Letters, 83 (14). 2823-2825 doi:10.1063/1.1615685

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Reference TypeJournal (article/letter/editorial)
TitleUsing point-defect engineering to increase stability of highly doped ultrashallow junctions formed by molecular-beam-epitaxy growth
JournalApplied Physics Letters
AuthorsShao, LinAuthor
Thompson, Phillip E.Author
Bennett, JoeAuthor
Dharmaiahgari, Bhanu P.Author
Trombetta, LenAuthor
Wang, XuemeiAuthor
Chen, HuiAuthor
Seo, Hye-WonAuthor
Chen, Quark Y.Author
Liu, JiaruiAuthor
Chu, Wei-KanAuthor
Year2003 (October 6)Volume83
Issue14
PublisherAIP Publishing
DOIdoi:10.1063/1.1615685Search in ResearchGate
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Mindat Ref. ID8536478Long-form Identifiermindat:1:5:8536478:7
GUID0
Full ReferenceShao, Lin, Thompson, Phillip E., Bennett, Joe, Dharmaiahgari, Bhanu P., Trombetta, Len, Wang, Xuemei, Chen, Hui, Seo, Hye-Won, Chen, Quark Y., Liu, Jiarui, Chu, Wei-Kan (2003) Using point-defect engineering to increase stability of highly doped ultrashallow junctions formed by molecular-beam-epitaxy growth. Applied Physics Letters, 83 (14). 2823-2825 doi:10.1063/1.1615685
Plain TextShao, Lin, Thompson, Phillip E., Bennett, Joe, Dharmaiahgari, Bhanu P., Trombetta, Len, Wang, Xuemei, Chen, Hui, Seo, Hye-Won, Chen, Quark Y., Liu, Jiarui, Chu, Wei-Kan (2003) Using point-defect engineering to increase stability of highly doped ultrashallow junctions formed by molecular-beam-epitaxy growth. Applied Physics Letters, 83 (14). 2823-2825 doi:10.1063/1.1615685
In(2003, October) Applied Physics Letters Vol. 83 (14) AIP Publishing

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