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Shao, Lin, Wang, Xuemei, Rusakova, Irene, Chen, Hui, Liu, Jiarui, Thompson, Phillip E., Chu, Wei-Kan (2003) Study on interfacial dislocations of Si substrate/epitaxial layer by self-interstitial decoration technique. Applied Physics Letters, 83 (5). 934-936 doi:10.1063/1.1596385

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Reference TypeJournal (article/letter/editorial)
TitleStudy on interfacial dislocations of Si substrate/epitaxial layer by self-interstitial decoration technique
JournalApplied Physics Letters
AuthorsShao, LinAuthor
Wang, XuemeiAuthor
Rusakova, IreneAuthor
Chen, HuiAuthor
Liu, JiaruiAuthor
Thompson, Phillip E.Author
Chu, Wei-KanAuthor
Year2003 (August 4)Volume83
Issue5
PublisherAIP Publishing
DOIdoi:10.1063/1.1596385Search in ResearchGate
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Mindat Ref. ID8537557Long-form Identifiermindat:1:5:8537557:0
GUID0
Full ReferenceShao, Lin, Wang, Xuemei, Rusakova, Irene, Chen, Hui, Liu, Jiarui, Thompson, Phillip E., Chu, Wei-Kan (2003) Study on interfacial dislocations of Si substrate/epitaxial layer by self-interstitial decoration technique. Applied Physics Letters, 83 (5). 934-936 doi:10.1063/1.1596385
Plain TextShao, Lin, Wang, Xuemei, Rusakova, Irene, Chen, Hui, Liu, Jiarui, Thompson, Phillip E., Chu, Wei-Kan (2003) Study on interfacial dislocations of Si substrate/epitaxial layer by self-interstitial decoration technique. Applied Physics Letters, 83 (5). 934-936 doi:10.1063/1.1596385
In(2003, August) Applied Physics Letters Vol. 83 (5) AIP Publishing

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Shao, Lin, Wang, Xuemei, Rusakova, Irene, Chen, Hui, Liu, Jiarui, Thompson, Phillip E., van der Heide, P.A.W., Chu, Wei-Kan (2004) Study on interfacial dislocations of Si substrate/epitaxial layer by defect trapping. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 219. 938-941 doi:10.1016/j.nimb.2004.01.192
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