Rashkeev, S. N., Fleetwood, D. M., Schrimpf, R. D., Pantelides, S. T. (2003) Radiation-induced acceptor deactivation in bipolar devices: Effects of electric field. Applied Physics Letters, 83 (22). 4646-4648 doi:10.1063/1.1630368

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Reference Type	Journal (article/letter/editorial)
Title	Radiation-induced acceptor deactivation in bipolar devices: Effects of electric field
Journal	Applied Physics Letters
Authors	Rashkeev, S. N.		Author
	Fleetwood, D. M.		Author
	Schrimpf, R. D.		Author
	Pantelides, S. T.		Author
Year	2003 (December)	Volume	83
Issue	22
Publisher	AIP Publishing
DOI	doi:10.1063/1.1630368Search in ResearchGate
	Generate Citation Formats
Mindat Ref. ID	8537079	Long-form Identifier	mindat:1:5:8537079:7
GUID	0
Full Reference	Rashkeev, S. N., Fleetwood, D. M., Schrimpf, R. D., Pantelides, S. T. (2003) Radiation-induced acceptor deactivation in bipolar devices: Effects of electric field. Applied Physics Letters, 83 (22). 4646-4648 doi:10.1063/1.1630368
Plain Text	Rashkeev, S. N., Fleetwood, D. M., Schrimpf, R. D., Pantelides, S. T. (2003) Radiation-induced acceptor deactivation in bipolar devices: Effects of electric field. Applied Physics Letters, 83 (22). 4646-4648 doi:10.1063/1.1630368
In	(2003, December) Applied Physics Letters Vol. 83 (22) AIP Publishing

	Rashkeev, S. N., Fleetwood, D. M., Schrimpf, R. D., Pantelides, S. T. (2002) Dual behavior of H+ at Si–SiO2 interfaces: Mobility versus trapping. Applied Physics Letters, 81 (10). 1839-1841 doi:10.1063/1.1504879
	Rashkeev, S.N., Fleetwood, D.M., Schrimpf, R.D., Pantelides, S.T. (2003) Statistical modeling of radiation-induced proton transport in silicon: deactivation of dopant acceptors in bipolar devices. IEEE Transactions on Nuclear Science, 50 (6) 1896-1900 doi:10.1109/tns.2003.820751
	Zhou, X. J., Tsetseris, L., Rashkeev, S. N., Fleetwood, D. M., Schrimpf, R. D., Pantelides, S. T., Felix, J. A., Gusev, E. P., D’Emic, C. (2004) Negative bias-temperature instabilities in metal–oxide–silicon devices with SiO2 and SiOxNy/HfO2 gate dielectrics. Applied Physics Letters, 84 (22). 4394-4396 doi:10.1063/1.1757636
	Marka, Z., Pasternak, R., Albridge, R. G., Rashkeev, S. N., Pantelides, S. T., Tolk, N. H., Choi, B. K., Fleetwood, D. M., Schrimpf, R. D. (2003) Two-color optical technique for characterization of x-ray radiation-enhanced electron transport in SiO2. Journal of Applied Physics, 93 (4). 1865-1870 doi:10.1063/1.1534904
	Rashkeev, S. N., Fleetwood, D. M., Schrimpf, R. D., Pantelides, S. T. (2001) Defect Generation by Hydrogen at the Si-SiO2Interface. Physical Review Letters, 87 (16). doi:10.1103/physrevlett.87.165506
	Batyrev, I. G., Hughart, D., Durand, R., Bounasser, M., Tuttle, B. R., Fleetwood, D. M., Schrimpf, R. D., Rashkeev, S. N., Dunham, G. W., Law, M., Pantelides, S. T. (2008) Effects of Hydrogen on the Radiation Response of Bipolar Transistors: Experiment and Modeling. IEEE Transactions on Nuclear Science, 55 (6) 3039-3045 doi:10.1109/tns.2008.2009353
	Wei, A., Kosier, S. L., Schrimpf, R. D., Fleetwood, D. M., Combs, W. E. (1994) Dose‐rate effects on radiation‐induced bipolar junction transistor gain degradation. Applied Physics Letters, 65 (15). 1918-1920 doi:10.1063/1.112816
	Puzyrev, Y. S., Tuttle, B. R., Schrimpf, R. D., Fleetwood, D. M., Pantelides, S. T. (2010) Theory of hot-carrier-induced phenomena in GaN high-electron-mobility transistors. Applied Physics Letters, 96 (5). 53505pp. doi:10.1063/1.3293008
	*Tsetseris, L., Fleetwood, D. M., Schrimpf, R. D., Pantelides, S. T. (2010) Hydrogen–dopant interactions in SiGe and strained Si. Applied Physics Letters, 96 (25). 251905pp. doi:10.1063/1.3456395*
	Tsetseris, L., Zhou, X. J., Fleetwood, D. M., Schrimpf, R. D., Pantelides, S. T. (2005) Physical mechanisms of negative-bias temperature instability. Applied Physics Letters, 86 (14). 142103pp. doi:10.1063/1.1897075
	Puzyrev, Y. S., Schrimpf, R. D., Fleetwood, D. M., Pantelides, S. T. (2015) Role of Fe impurity complexes in the degradation of GaN/AlGaN high-electron-mobility transistors. Applied Physics Letters, 106 (5). 53505pp. doi:10.1063/1.4907675

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Rashkeev, S. N., Fleetwood, D. M., Schrimpf, R. D., Pantelides, S. T. (2003) Radiation-induced acceptor deactivation in bipolar devices: Effects of electric field. Applied Physics Letters, 83 (22). 4646-4648 doi:10.1063/1.1630368

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