Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Tsetseris, L., Fleetwood, D. M., Schrimpf, R. D., Pantelides, S. T. (2010) Hydrogen–dopant interactions in SiGe and strained Si. Applied Physics Letters, 96 (25). 251905pp. doi:10.1063/1.3456395

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleHydrogen–dopant interactions in SiGe and strained Si
JournalApplied Physics Letters
AuthorsTsetseris, L.Author
Fleetwood, D. M.Author
Schrimpf, R. D.Author
Pantelides, S. T.Author
Year2010 (June 21)Volume96
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.3456395Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8584578Long-form Identifiermindat:1:5:8584578:7
GUID0
Full ReferenceTsetseris, L., Fleetwood, D. M., Schrimpf, R. D., Pantelides, S. T. (2010) Hydrogen–dopant interactions in SiGe and strained Si. Applied Physics Letters, 96 (25). 251905pp. doi:10.1063/1.3456395
Plain TextTsetseris, L., Fleetwood, D. M., Schrimpf, R. D., Pantelides, S. T. (2010) Hydrogen–dopant interactions in SiGe and strained Si. Applied Physics Letters, 96 (25). 251905pp. doi:10.1063/1.3456395
In(2010, June) Applied Physics Letters Vol. 96 (25) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Tsetseris, L., Zhou, X. J., Fleetwood, D. M., Schrimpf, R. D., Pantelides, S. T. (2004) Dual role of fluorine at the Si–SiO2 interface. Applied Physics Letters, 85 (21). 4950-4952 doi:10.1063/1.1825621
Tsetseris, L., Zhou, X. J., Fleetwood, D. M., Schrimpf, R. D., Pantelides, S. T. (2005) Physical mechanisms of negative-bias temperature instability. Applied Physics Letters, 86 (14). 142103pp. doi:10.1063/1.1897075
Beck, M. J., Tsetseris, L., Caussanel, M., Schrimpf, R. D., Fleetwood, D. M., Pantelides, S. T. (2006) Atomic-Scale Mechanisms for Low-NIEL Dopant-Type Dependent Damage in Si. IEEE Transactions on Nuclear Science, 53 (6) 3621-3628 doi:10.1109/tns.2006.885383
Puzyrev, Y. S., Tuttle, B. R., Schrimpf, R. D., Fleetwood, D. M., Pantelides, S. T. (2010) Theory of hot-carrier-induced phenomena in GaN high-electron-mobility transistors. Applied Physics Letters, 96 (5). 53505pp. doi:10.1063/1.3293008
Marinopoulos, A. G., Batyrev, I., Zhou, X. J., Schrimpf, R. D., Fleetwood, D. M., Pantelides, S. T. (2007) Hydrogen shuttling near Hf-defect complexes in Si∕SiO2∕HfO2 structures. Applied Physics Letters, 91 (23). 233503pp. doi:10.1063/1.2820380
Batyrev, I. G., Tuttle, B., Fleetwood, D. M., Schrimpf, R. D., Tsetseris, L., Pantelides, S. T. (2008) Reactions of Water Molecules in Silica-Based Network Glasses. Physical Review Letters, 100 (10). doi:10.1103/physrevlett.100.105503
Rashkeev, S. N., Fleetwood, D. M., Schrimpf, R. D., Pantelides, S. T. (2002) Dual behavior of H+ at Si–SiO2 interfaces: Mobility versus trapping. Applied Physics Letters, 81 (10). 1839-1841 doi:10.1063/1.1504879
Rashkeev, S. N., Fleetwood, D. M., Schrimpf, R. D., Pantelides, S. T. (2001) Defect Generation by Hydrogen at the Si-SiO2Interface. Physical Review Letters, 87 (16). doi:10.1103/physrevlett.87.165506
Zhou, X. J., Tsetseris, L., Rashkeev, S. N., Fleetwood, D. M., Schrimpf, R. D., Pantelides, S. T., Felix, J. A., Gusev, E. P., D’Emic, C. (2004) Negative bias-temperature instabilities in metal–oxide–silicon devices with SiO2 and SiOxNy/HfO2 gate dielectrics. Applied Physics Letters, 84 (22). 4394-4396 doi:10.1063/1.1757636
Rashkeev, S. N., Fleetwood, D. M., Schrimpf, R. D., Pantelides, S. T. (2003) Radiation-induced acceptor deactivation in bipolar devices: Effects of electric field. Applied Physics Letters, 83 (22). 4646-4648 doi:10.1063/1.1630368
Roy, T., Puzyrev, Y. S., Tuttle, B. R., Fleetwood, D. M., Schrimpf, R. D., Brown, D. F., Mishra, U. K., Pantelides, S. T. (2010) Electrical-stress-induced degradation in AlGaN/GaN high electron mobility transistors grown under gallium-rich, nitrogen-rich, and ammonia-rich conditions. Applied Physics Letters, 96 (13). 133503pp. doi:10.1063/1.3377004
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 26, 2025 16:07:55
Go to top of page