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Feng, M., Holonyak, N., Chan, R. (2004) Quantum-well-base heterojunction bipolar light-emitting transistor. Applied Physics Letters, 84 (11). 1952-1954 doi:10.1063/1.1669071

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Reference TypeJournal (article/letter/editorial)
TitleQuantum-well-base heterojunction bipolar light-emitting transistor
JournalApplied Physics Letters
AuthorsFeng, M.Author
Holonyak, N.Author
Chan, R.Author
Year2004 (March 15)Volume84
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.1669071Search in ResearchGate
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Mindat Ref. ID8538047Long-form Identifiermindat:1:5:8538047:5
GUID0
Full ReferenceFeng, M., Holonyak, N., Chan, R. (2004) Quantum-well-base heterojunction bipolar light-emitting transistor. Applied Physics Letters, 84 (11). 1952-1954 doi:10.1063/1.1669071
Plain TextFeng, M., Holonyak, N., Chan, R. (2004) Quantum-well-base heterojunction bipolar light-emitting transistor. Applied Physics Letters, 84 (11). 1952-1954 doi:10.1063/1.1669071
In(2004, March) Applied Physics Letters Vol. 84 (11) AIP Publishing

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Feng, M., Holonyak, N., Chu-Kung, B., Walter, G., Chan, R. (2004) Type-II GaAsSb/InP heterojunction bipolar light-emitting transistor. Applied Physics Letters, 84 (23). 4792-4794 doi:10.1063/1.1760595
Walter, G., Holonyak, N., Feng, M., Chan, R. (2004) Laser operation of a heterojunction bipolar light-emitting transistor. Applied Physics Letters, 85 (20). 4768-4770 doi:10.1063/1.1818331
Feng, M., Holonyak, N., Hafez, W. (2004) Light-emitting transistor: Light emission from InGaP/GaAs heterojunction bipolar transistors. Applied Physics Letters, 84 (1). 151-153 doi:10.1063/1.1637950
Then, H. W., Feng, M., Holonyak, N., Wu, C. H. (2007) Experimental determination of the effective minority carrier lifetime in the operation of a quantum-well n-p-n heterojunction bipolar light-emitting transistor of varying base quantum-well design and doping. Applied Physics Letters, 91 (3). 33505pp. doi:10.1063/1.2759263
Walter, G., James, A., Holonyak, N., Feng, M., Chan, R. (2006) Collector breakdown in the heterojunction bipolar transistor laser. Applied Physics Letters, 88 (23). 232105pp. doi:10.1063/1.2210079
Feng, M., Holonyak, N., Walter, G., Chan, R. (2005) Room temperature continuous wave operation of a heterojunction bipolar transistor laser. Applied Physics Letters, 87 (13). 131103pp. doi:10.1063/1.2058213
Then, H. W., Wu, C. H., Feng, M., Holonyak, N., Walter, G. (2010) Stochastic base doping and quantum-well enhancement of recombination in an n-p-n light-emitting transistor or transistor laser. Applied Physics Letters, 96 (26). 263505pp. doi:10.1063/1.3458708
Chan, R., Feng, M., Holonyak, N., James, A., Walter, G. (2006) Collector current map of gain and stimulated recombination on the base quantum well transitions of a transistor laser. Applied Physics Letters, 88 (14). 143508pp. doi:10.1063/1.2191448
Then, H. W., Walter, G., Feng, M., Holonyak, N. (2008) Optical bandwidth enhancement of heterojunction bipolar transistor laser operation with an auxiliary base signal. Applied Physics Letters, 93 (16). 163504pp. doi:10.1063/1.3000635
Feng, M., Holonyak, N., James, A., Cimino, K., Walter, G., Chan, R. (2006) Carrier lifetime and modulation bandwidth of a quantum well AlGaAs∕InGaP∕GaAs∕InGaAs transistor laser. Applied Physics Letters, 89 (11). 113504pp. doi:10.1063/1.2346369
Feng, M., Bambery, R., Holonyak, N. (2011) Bandfilling and photon-assisted tunneling in a quantum-well transistor laser. Applied Physics Letters, 98 (12). 123505pp. doi:10.1063/1.3569949
 
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