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Then, H. W., Wu, C. H., Feng, M., Holonyak, N., Walter, G. (2010) Stochastic base doping and quantum-well enhancement of recombination in an n-p-n light-emitting transistor or transistor laser. Applied Physics Letters, 96 (26). 263505pp. doi:10.1063/1.3458708

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Reference TypeJournal (article/letter/editorial)
TitleStochastic base doping and quantum-well enhancement of recombination in an n-p-n light-emitting transistor or transistor laser
JournalApplied Physics Letters
AuthorsThen, H. W.Author
Wu, C. H.Author
Feng, M.Author
Holonyak, N.Author
Walter, G.Author
Year2010 (June 28)Volume96
Issue26
PublisherAIP Publishing
DOIdoi:10.1063/1.3458708Search in ResearchGate
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Mindat Ref. ID8584747Long-form Identifiermindat:1:5:8584747:5
GUID0
Full ReferenceThen, H. W., Wu, C. H., Feng, M., Holonyak, N., Walter, G. (2010) Stochastic base doping and quantum-well enhancement of recombination in an n-p-n light-emitting transistor or transistor laser. Applied Physics Letters, 96 (26). 263505pp. doi:10.1063/1.3458708
Plain TextThen, H. W., Wu, C. H., Feng, M., Holonyak, N., Walter, G. (2010) Stochastic base doping and quantum-well enhancement of recombination in an n-p-n light-emitting transistor or transistor laser. Applied Physics Letters, 96 (26). 263505pp. doi:10.1063/1.3458708
In(2010, June) Applied Physics Letters Vol. 96 (26) AIP Publishing

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Then, H. W., Feng, M., Holonyak, N., Wu, C. H. (2007) Experimental determination of the effective minority carrier lifetime in the operation of a quantum-well n-p-n heterojunction bipolar light-emitting transistor of varying base quantum-well design and doping. Applied Physics Letters, 91 (3). 33505pp. doi:10.1063/1.2759263
Walter, G., Wu, C. H., Then, H. W., Feng, M., Holonyak, N. (2009) 4.3 GHz optical bandwidth light emitting transistor. Applied Physics Letters, 94 (24). 241101pp. doi:10.1063/1.3153146
Wu, C. H., Walter, G., Then, H. W., Feng, M., Holonyak, N. (2009) Scaling of light emitting transistor for multigigahertz optical bandwidth. Applied Physics Letters, 94 (17). 171101pp. doi:10.1063/1.3126642
Feng, M., Holonyak, N., Then, H. W., Wu, C. H., Walter, G. (2009) Tunnel junction transistor laser. Applied Physics Letters, 94 (4). 41118pp. doi:10.1063/1.3077020
Then, H. W., Walter, G., Feng, M., Holonyak, N. (2008) Optical bandwidth enhancement of heterojunction bipolar transistor laser operation with an auxiliary base signal. Applied Physics Letters, 93 (16). 163504pp. doi:10.1063/1.3000635
Then, H. W., Feng, M., Holonyak, N. (2010) Physics of base charge dynamics in the three port transistor laser. Applied Physics Letters, 96 (11). 113509pp. doi:10.1063/1.3364143
Then, H. W., Walter, G., Feng, M., Holonyak, N. (2007) Collector characteristics and the differential optical gain of a quantum-well transistor laser. Applied Physics Letters, 91 (24). 243508pp. doi:10.1063/1.2824817
Feng, M., Holonyak, N., Then, H. W., Walter, G. (2007) Charge control analysis of transistor laser operation. Applied Physics Letters, 91 (5). 53501pp. doi:10.1063/1.2767172
Wu, C. H., Then, H. W., Feng, M., Holonyak, N. (2010) Microwave determination of electron-hole recombination dynamics from spontaneous to stimulated emission in a quantum-well microcavity laser. Applied Physics Letters, 96 (13). 131108pp. doi:10.1063/1.3377918
Feng, M., Holonyak, N., Chan, R. (2004) Quantum-well-base heterojunction bipolar light-emitting transistor. Applied Physics Letters, 84 (11). 1952-1954 doi:10.1063/1.1669071
Then, H. W., Wu, C. H., Feng, M., Holonyak, N. (2010) Microwave characterization of Purcell enhancement in a microcavity laser. Applied Physics Letters, 96 (13). 131107pp. doi:10.1063/1.3377913
 
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