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Lee, K. Y., Lee, W. C., Lee, Y. J., Huang, M. L., Chang, C. H., Wu, T. B., Hong, M., Kwo, J. (2006) Molecular beam epitaxy grown template for subsequent atomic layer deposition of high κ dielectrics. Applied Physics Letters, 89 (22). 222906pp. doi:10.1063/1.2397542

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Reference TypeJournal (article/letter/editorial)
TitleMolecular beam epitaxy grown template for subsequent atomic layer deposition of high κ dielectrics
JournalApplied Physics Letters
AuthorsLee, K. Y.Author
Lee, W. C.Author
Lee, Y. J.Author
Huang, M. L.Author
Chang, C. H.Author
Wu, T. B.Author
Hong, M.Author
Kwo, J.Author
Year2006 (November 27)Volume89
Issue22
PublisherAIP Publishing
DOIdoi:10.1063/1.2397542Search in ResearchGate
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Mindat Ref. ID8551054Long-form Identifiermindat:1:5:8551054:4
GUID0
Full ReferenceLee, K. Y., Lee, W. C., Lee, Y. J., Huang, M. L., Chang, C. H., Wu, T. B., Hong, M., Kwo, J. (2006) Molecular beam epitaxy grown template for subsequent atomic layer deposition of high κ dielectrics. Applied Physics Letters, 89 (22). 222906pp. doi:10.1063/1.2397542
Plain TextLee, K. Y., Lee, W. C., Lee, Y. J., Huang, M. L., Chang, C. H., Wu, T. B., Hong, M., Kwo, J. (2006) Molecular beam epitaxy grown template for subsequent atomic layer deposition of high κ dielectrics. Applied Physics Letters, 89 (22). 222906pp. doi:10.1063/1.2397542
In(2006, November) Applied Physics Letters Vol. 89 (22) AIP Publishing

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Huang, M. L., Chang, Y. C., Chang, C. H., Lee, Y. J., Chang, P., Kwo, J., Wu, T. B., Hong, M. (2005) Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3. Applied Physics Letters, 87 (25). 252104pp. doi:10.1063/1.2146060
Chang, C.-H., Chiou, Y.-K., Chang, Y.-C., Lee, K.-Y., Lin, T.-D., Wu, T.-B., Hong, M., Kwo, J. (2006) Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As. Applied Physics Letters, 89 (24). 242911pp. doi:10.1063/1.2405387
Chang, Y. C., Chiu, H. C., Lee, Y. J., Huang, M. L., Lee, K. Y., Hong, M., Chiu, Y. N., Kwo, J., Wang, Y. H. (2007) Structural and electrical characteristics of atomic layer deposited high κ HfO2 on GaN. Applied Physics Letters, 90 (23). 232904pp. doi:10.1063/1.2746057
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Wu, C. N., Wu, T. S., Huang, S. Y., Lee, W. C., Chang, Y. H., Soo, Y. L., Hong, M., Kwo, J. (2013) Ferromagnetism in cluster free, transition metal doped high κ dilute magnetic oxides: Films and nanocrystals. Journal of Applied Physics, 113 (17). 17pp. doi:10.1063/1.4799613
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