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Chang, C.-H., Chiou, Y.-K., Chang, Y.-C., Lee, K.-Y., Lin, T.-D., Wu, T.-B., Hong, M., Kwo, J. (2006) Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As. Applied Physics Letters, 89 (24). 242911pp. doi:10.1063/1.2405387

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Reference TypeJournal (article/letter/editorial)
TitleInterfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As
JournalApplied Physics Letters
AuthorsChang, C.-H.Author
Chiou, Y.-K.Author
Chang, Y.-C.Author
Lee, K.-Y.Author
Lin, T.-D.Author
Wu, T.-B.Author
Hong, M.Author
Kwo, J.Author
Year2006 (December 11)Volume89
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.2405387Search in ResearchGate
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Mindat Ref. ID8551370Long-form Identifiermindat:1:5:8551370:9
GUID0
Full ReferenceChang, C.-H., Chiou, Y.-K., Chang, Y.-C., Lee, K.-Y., Lin, T.-D., Wu, T.-B., Hong, M., Kwo, J. (2006) Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As. Applied Physics Letters, 89 (24). 242911pp. doi:10.1063/1.2405387
Plain TextChang, C.-H., Chiou, Y.-K., Chang, Y.-C., Lee, K.-Y., Lin, T.-D., Wu, T.-B., Hong, M., Kwo, J. (2006) Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As. Applied Physics Letters, 89 (24). 242911pp. doi:10.1063/1.2405387
In(2006, December) Applied Physics Letters Vol. 89 (24) AIP Publishing

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Chang, Y. C., Huang, M. L., Lee, K. Y., Lee, Y. J., Lin, T. D., Hong, M., Kwo, J., Lay, T. S., Liao, C. C., Cheng, K. Y. (2008) Atomic-layer-deposited HfO2 on In0.53Ga0.47As: Passivation and energy-band parameters. Applied Physics Letters, 92 (7). 72901pp. doi:10.1063/1.2883967
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