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Kitamura, M., Arakawa, Y. (2006) High-performance pentacene thin-film transistors with high dielectric constant gate insulators. Applied Physics Letters, 89 (22). 223525pp. doi:10.1063/1.2400399

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Reference TypeJournal (article/letter/editorial)
TitleHigh-performance pentacene thin-film transistors with high dielectric constant gate insulators
JournalApplied Physics Letters
AuthorsKitamura, M.Author
Arakawa, Y.Author
Year2006 (November 27)Volume89
Issue22
PublisherAIP Publishing
DOIdoi:10.1063/1.2400399Search in ResearchGate
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Mindat Ref. ID8551130Long-form Identifiermindat:1:5:8551130:3
GUID0
Full ReferenceKitamura, M., Arakawa, Y. (2006) High-performance pentacene thin-film transistors with high dielectric constant gate insulators. Applied Physics Letters, 89 (22). 223525pp. doi:10.1063/1.2400399
Plain TextKitamura, M., Arakawa, Y. (2006) High-performance pentacene thin-film transistors with high dielectric constant gate insulators. Applied Physics Letters, 89 (22). 223525pp. doi:10.1063/1.2400399
In(2006, November) Applied Physics Letters Vol. 89 (22) AIP Publishing

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Na, Jong H., Kitamura, M., Lee, D., Arakawa, Y. (2007) High performance flexible pentacene thin-film transistors fabricated on titanium silicon oxide gate dielectrics. Applied Physics Letters, 90 (16). 163514pp. doi:10.1063/1.2730586
Na, Jong H., Kitamura, M., Arakawa, Y. (2007) High performance n-channel thin-film transistors with an amorphous phase C60 film on plastic substrate. Applied Physics Letters, 91 (19). 193501pp. doi:10.1063/1.2807843
Kitamura, M., Imada, T., Arakawa, Y. (2003) Organic light-emitting diodes driven by pentacene-based thin-film transistors. Applied Physics Letters, 83 (16). 3410-3412 doi:10.1063/1.1620676
Kitamura, Masatoshi, Kuzumoto, Yasutaka, Kang, Woogun, Aomori, Shigeru, Arakawa, Yasuhiko (2010) High conductance bottom-contact pentacene thin-film transistors with gold-nickel adhesion layers. Applied Physics Letters, 97 (3). 33306pp. doi:10.1063/1.3465735
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Kitamura, Masatoshi, Kuzumoto, Yasutaka, Kamura, Masakazu, Aomori, Shigeru, Arakawa, Yasuhiko (2007) High-performance fullerene C60 thin-film transistors operating at low voltages. Applied Physics Letters, 91 (18). 183514pp. doi:10.1063/1.2804004
Kitamura, Masatoshi, Aomori, Shigeru, Na, Jong Ho, Arakawa, Yasuhiko (2008) Bottom-contact fullerene C60 thin-film transistors with high field-effect mobilities. Applied Physics Letters, 93 (3). 33313pp. doi:10.1063/1.2959732
Pan, Tung-Ming, Li, Zhi-Hong (2010) High-performance CF4 plasma treated polycrystalline silicon thin-film transistors using a high-k Tb2O3 gate dielectric. Applied Physics Letters, 96 (11). 113504pp. doi:10.1063/1.3357428
Kim, Kang Dae, Song, Chung Kun (2006) Low voltage pentacene thin film transistors employing a self-grown metal-oxide as a gate dielectric. Applied Physics Letters, 88 (23). 233508pp. doi:10.1063/1.2213010
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Dondapati, Hareesh, Ha, Duc, Jenrette, Erin, Xiao, Bo, Pradhan, A. K. (2014) High-performance chemical-bath deposited CdS thin-film transistors with ZrO2 gate dielectric. Applied Physics Letters, 105 (5). 52105pp. doi:10.1063/1.4892578
 
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