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Pan, Tung-Ming, Li, Zhi-Hong (2010) High-performance CF4 plasma treated polycrystalline silicon thin-film transistors using a high-k Tb2O3 gate dielectric. Applied Physics Letters, 96 (11). 113504pp. doi:10.1063/1.3357428

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Reference TypeJournal (article/letter/editorial)
TitleHigh-performance CF4 plasma treated polycrystalline silicon thin-film transistors using a high-k Tb2O3 gate dielectric
JournalApplied Physics Letters
AuthorsPan, Tung-MingAuthor
Li, Zhi-HongAuthor
Year2010 (March 15)Volume96
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.3357428Search in ResearchGate
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Mindat Ref. ID8582022Long-form Identifiermindat:1:5:8582022:9
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Full ReferencePan, Tung-Ming, Li, Zhi-Hong (2010) High-performance CF4 plasma treated polycrystalline silicon thin-film transistors using a high-k Tb2O3 gate dielectric. Applied Physics Letters, 96 (11). 113504pp. doi:10.1063/1.3357428
Plain TextPan, Tung-Ming, Li, Zhi-Hong (2010) High-performance CF4 plasma treated polycrystalline silicon thin-film transistors using a high-k Tb2O3 gate dielectric. Applied Physics Letters, 96 (11). 113504pp. doi:10.1063/1.3357428
In(2010, March) Applied Physics Letters Vol. 96 (11) AIP Publishing

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