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Yao, H. B., Chi, D. Z., Li, R., Lee, S. J., Kwong, D.-L. (2006) Effect of the inversion layer on the electrical characterization of Pt germanide/n-Ge(001) Schottky contacts. Applied Physics Letters, 89 (24). 242117pp. doi:10.1063/1.2408665

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Reference TypeJournal (article/letter/editorial)
TitleEffect of the inversion layer on the electrical characterization of Pt germanide/n-Ge(001) Schottky contacts
JournalApplied Physics Letters
AuthorsYao, H. B.Author
Chi, D. Z.Author
Li, R.Author
Lee, S. J.Author
Kwong, D.-L.Author
Year2006 (December 11)Volume89
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.2408665Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8551431Long-form Identifiermindat:1:5:8551431:9
GUID0
Full ReferenceYao, H. B., Chi, D. Z., Li, R., Lee, S. J., Kwong, D.-L. (2006) Effect of the inversion layer on the electrical characterization of Pt germanide/n-Ge(001) Schottky contacts. Applied Physics Letters, 89 (24). 242117pp. doi:10.1063/1.2408665
Plain TextYao, H. B., Chi, D. Z., Li, R., Lee, S. J., Kwong, D.-L. (2006) Effect of the inversion layer on the electrical characterization of Pt germanide/n-Ge(001) Schottky contacts. Applied Physics Letters, 89 (24). 242117pp. doi:10.1063/1.2408665
In(2006, December) Applied Physics Letters Vol. 89 (24) AIP Publishing

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