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Chi, D. Z., Lee, R. T. P., Chua, S. J., Lee, S. J., Ashok, S., Kwong, D.-L. (2005) Current–voltage characteristics of Schottky barriers with barrier heights larger than the semiconductor band gap: The case of NiGe∕n-(001)Ge contact. Journal of Applied Physics, 97 (11). 113706pp. doi:10.1063/1.1923162

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Reference TypeJournal (article/letter/editorial)
TitleCurrent–voltage characteristics of Schottky barriers with barrier heights larger than the semiconductor band gap: The case of NiGe∕n-(001)Ge contact
JournalJournal of Applied Physics
AuthorsChi, D. Z.Author
Lee, R. T. P.Author
Chua, S. J.Author
Lee, S. J.Author
Ashok, S.Author
Kwong, D.-L.Author
Year2005 (June)Volume97
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.1923162Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID5132006Long-form Identifiermindat:1:5:5132006:1
GUID0
Full ReferenceChi, D. Z., Lee, R. T. P., Chua, S. J., Lee, S. J., Ashok, S., Kwong, D.-L. (2005) Current–voltage characteristics of Schottky barriers with barrier heights larger than the semiconductor band gap: The case of NiGe∕n-(001)Ge contact. Journal of Applied Physics, 97 (11). 113706pp. doi:10.1063/1.1923162
Plain TextChi, D. Z., Lee, R. T. P., Chua, S. J., Lee, S. J., Ashok, S., Kwong, D.-L. (2005) Current–voltage characteristics of Schottky barriers with barrier heights larger than the semiconductor band gap: The case of NiGe∕n-(001)Ge contact. Journal of Applied Physics, 97 (11). 113706pp. doi:10.1063/1.1923162
In(2005, June) Journal of Applied Physics Vol. 97 (11) AIP Publishing

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Yao, H. B., Chi, D. Z., Li, R., Lee, S. J., Kwong, D.-L. (2006) Effect of the inversion layer on the electrical characterization of Pt germanide/n-Ge(001) Schottky contacts. Applied Physics Letters, 89 (24). 242117pp. doi:10.1063/1.2408665
Chi, D. Z., Mangelinck, D., Lahiri, S. K., Lee, P. S., Pey, K. L. (2001) Comparative study of current–voltage characteristics of Ni and Ni(Pt)-alloy silicided p+/n diodes. Applied Physics Letters, 78 (21). 3256-3258 doi:10.1063/1.1374496
Lee, S. C., Pearson, G. L. (1981) Current‐voltage characteristics of AlxGa1−xAs Schottky barriers andp‐njunctions. Journal of Applied Physics, 52 (8). 5202-5206 doi:10.1063/1.329423
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Chi, D. Z., Wang, W. D., Chua, S. J., Ashok, S. (2002) Reverse current transport mechanism in shallow junctions containing silicide spikes. Journal of Applied Physics, 92 (12). 7532-7535 doi:10.1063/1.1521511
Balakrisnan, B., Tan, C. C., Liew, S. L., Lim, P. C., Goh, G. K. L., Foo, Y. L., Chi, D. Z. (2005) Texture of NiGe on Ge(001) and its evolution with formation temperature. Applied Physics Letters, 87 (24). 241922pp. doi:10.1063/1.2135210
Eglash, S. J., Newman, N., Pan, S., Mo, D., Shenai, K., Spicer, W. E., Ponce, F. A., Collins, D. M. (1987) Engineered Schottky barrier diodes for the modification and control of Schottky barrier heights. Journal of Applied Physics, 61 (11). 5159-5169 doi:10.1063/1.338290
Fu, D. J., Lee, J. C., Choi, S. W., Lee, S. J., Kang, T. W., Jang, M. S., Lee, H. I., Woo, Y. D. (2002) Study of ferroelectricity and current–voltage characteristics of CdZnTe. Applied Physics Letters, 81 (27). 5207-5209 doi:10.1063/1.1530744
Yu, L. S., Liu, Q. Z., Xing, Q. J., Qiao, D. J., Lau, S. S., Redwing, J. (1998) The role of the tunneling component in the current–voltage characteristics of metal-GaN Schottky diodes. Journal of Applied Physics, 84 (4). 2099-2104 doi:10.1063/1.368270
 
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