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Chi, D. Z., Wang, W. D., Chua, S. J., Ashok, S. (2002) Reverse current transport mechanism in shallow junctions containing silicide spikes. Journal of Applied Physics, 92 (12). 7532-7535 doi:10.1063/1.1521511

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Reference TypeJournal (article/letter/editorial)
TitleReverse current transport mechanism in shallow junctions containing silicide spikes
JournalJournal of Applied Physics
AuthorsChi, D. Z.Author
Wang, W. D.Author
Chua, S. J.Author
Ashok, S.Author
Year2002 (December 15)Volume92
Issue12
PublisherAIP Publishing
DOIdoi:10.1063/1.1521511Search in ResearchGate
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Mindat Ref. ID5115718Long-form Identifiermindat:1:5:5115718:2
GUID0
Full ReferenceChi, D. Z., Wang, W. D., Chua, S. J., Ashok, S. (2002) Reverse current transport mechanism in shallow junctions containing silicide spikes. Journal of Applied Physics, 92 (12). 7532-7535 doi:10.1063/1.1521511
Plain TextChi, D. Z., Wang, W. D., Chua, S. J., Ashok, S. (2002) Reverse current transport mechanism in shallow junctions containing silicide spikes. Journal of Applied Physics, 92 (12). 7532-7535 doi:10.1063/1.1521511
In(2002, December) Journal of Applied Physics Vol. 92 (12) AIP Publishing

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Cohen, S. S., Piacente, P. A., Gildenblat, G., Brown, D. M. (1982) Platinum silicide ohmic contacts to shallow junctions in silicon. Journal of Applied Physics, 53 (12). 8856-8862 doi:10.1063/1.330439
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Soh, C. B., Chua, S. J., Tripathy, S., Chow, S. Y., Chi, D. Z., Liu, W. (2005) Influence of composition pulling effect on the two-dimensional electron gas formed at AlyInxGa1−x−yN∕GaN interface. Journal of Applied Physics, 98 (10). 103704pp. doi:10.1063/1.2132090
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