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Kawanishi, Hideo, Niikura, Eiichiro, Yamamoto, Mao, Takeda, Shoichiro (2006) Experimental energy difference between heavy- or light-hole valence band and crystal-field split-off-hole valence band in AlxGa1−xN. Applied Physics Letters, 89 (25). 251107pp. doi:10.1063/1.2410242

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Reference TypeJournal (article/letter/editorial)
TitleExperimental energy difference between heavy- or light-hole valence band and crystal-field split-off-hole valence band in AlxGa1−xN
JournalApplied Physics Letters
AuthorsKawanishi, HideoAuthor
Niikura, EiichiroAuthor
Yamamoto, MaoAuthor
Takeda, ShoichiroAuthor
Year2006 (December 18)Volume89
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.2410242Search in ResearchGate
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Mindat Ref. ID8551503Long-form Identifiermindat:1:5:8551503:5
GUID0
Full ReferenceKawanishi, Hideo, Niikura, Eiichiro, Yamamoto, Mao, Takeda, Shoichiro (2006) Experimental energy difference between heavy- or light-hole valence band and crystal-field split-off-hole valence band in AlxGa1−xN. Applied Physics Letters, 89 (25). 251107pp. doi:10.1063/1.2410242
Plain TextKawanishi, Hideo, Niikura, Eiichiro, Yamamoto, Mao, Takeda, Shoichiro (2006) Experimental energy difference between heavy- or light-hole valence band and crystal-field split-off-hole valence band in AlxGa1−xN. Applied Physics Letters, 89 (25). 251107pp. doi:10.1063/1.2410242
In(2006, December) Applied Physics Letters Vol. 89 (25) AIP Publishing

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Staflin, T. (1965) Infra-red absorption due to hole transitions involving the split-off valence-band in silicon. Physics Letters, 19. 84-85 doi:10.1016/0031-9163(65)90719-5
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Hrivnák, Ľ. (1990) Determination of Γ electron and light hole effective masses in AlxGa1−xAs on the basis of energy gaps, band‐gap offsets, and energy levels in AlxGa1−xAs/GaAs quantum wells. Applied Physics Letters, 56 (24). 2425-2427 doi:10.1063/1.102898
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