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Zhang, Jing, Zhao, Hongping, Tansu, Nelson (2010) Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers. Applied Physics Letters, 97 (11). 111105pp. doi:10.1063/1.3488825

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Reference TypeJournal (article/letter/editorial)
TitleEffect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers
JournalApplied Physics Letters
AuthorsZhang, JingAuthor
Zhao, HongpingAuthor
Tansu, NelsonAuthor
Year2010 (September 13)Volume97
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.3488825Search in ResearchGate
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Mindat Ref. ID8586503Long-form Identifiermindat:1:5:8586503:7
GUID0
Full ReferenceZhang, Jing, Zhao, Hongping, Tansu, Nelson (2010) Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers. Applied Physics Letters, 97 (11). 111105pp. doi:10.1063/1.3488825
Plain TextZhang, Jing, Zhao, Hongping, Tansu, Nelson (2010) Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers. Applied Physics Letters, 97 (11). 111105pp. doi:10.1063/1.3488825
In(2010, September) Applied Physics Letters Vol. 97 (11) AIP Publishing

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Zhao, Hongping, Tansu, Nelson (2010) Optical gain characteristics of staggered InGaN quantum wells lasers. Journal of Applied Physics, 107 (11). 113110pp. doi:10.1063/1.3407564
Zhang, Jing, Zhao, Hongping, Tansu, Nelson (2011) Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes. Applied Physics Letters, 98 (17). 171111pp. doi:10.1063/1.3583442
Zhao, Hongping, Arif, Ronald A., Tansu, Nelson (2008) Self-consistent gain analysis of type-II ‘W’ InGaN–GaNAs quantum well lasers. Journal of Applied Physics, 104 (4). 43104pp. doi:10.1063/1.2970107
Tansu, Nelson, Mawst, Luke J. (2003) The role of hole leakage in 1300-nm InGaAsN quantum-well lasers. Applied Physics Letters, 82 (10). 1500-1502 doi:10.1063/1.1558218
Jing Zhang, , Tansu, Nelson (2013) Engineering of AlGaN-Delta-GaN Quantum-Well Gain Media for Mid- and Deep-Ultraviolet Lasers. IEEE Photonics Journal, 5 (2) 2600209 doi:10.1109/jphot.2013.2248705
Zhao, Hongping, Liu, Guangyu, Tansu, Nelson (2010) Analysis of InGaN-delta-InN quantum wells for light-emitting diodes. Applied Physics Letters, 97 (13). 131114pp. doi:10.1063/1.3493188
Arif, Ronald A., Zhao, Hongping, Tansu, Nelson (2008) Type-II InGaN-GaNAs quantum wells for lasers applications. Applied Physics Letters, 92 (1). 11104pp. doi:10.1063/1.2829600
Palmer, D. J., Smowton, P. M., Blood, P., Yeh, Jeng-Ya, Mawst, L. J., Tansu, Nelson (2005) Effect of nitrogen on gain and efficiency in InGaAsN quantum-well lasers. Applied Physics Letters, 86 (7). 71121pp. doi:10.1063/1.1868070
Tansu, Nelson, Mawst, Luke J. (2005) Current injection efficiency of InGaAsN quantum-well lasers. Journal of Applied Physics, 97 (5). 54502pp. doi:10.1063/1.1852697
Sun, Guan, Xu, Guibao, Ding, Yujie J., Zhao, Hongping, Liu, Guangyu, Zhang, Jing, Tansu, Nelson (2011) Investigation of fast and slow decays in InGaN/GaN quantum wells. Applied Physics Letters, 99 (8). 81104pp. doi:10.1063/1.3627166
Kawanishi, Hideo, Niikura, Eiichiro, Yamamoto, Mao, Takeda, Shoichiro (2006) Experimental energy difference between heavy- or light-hole valence band and crystal-field split-off-hole valence band in AlxGa1−xN. Applied Physics Letters, 89 (25). 251107pp. doi:10.1063/1.2410242
 
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