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Sugawara, Takuya, Oshima, Yasuhiro, Sreenivasan, Raghavasimhan, McIntyre, Paul C. (2007) Electrical properties of germanium/metal-oxide gate stacks with atomic layer deposition grown hafnium-dioxide and plasma-synthesized interface layers. Applied Physics Letters, 90 (11). 112912pp. doi:10.1063/1.2472197

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Reference TypeJournal (article/letter/editorial)
TitleElectrical properties of germanium/metal-oxide gate stacks with atomic layer deposition grown hafnium-dioxide and plasma-synthesized interface layers
JournalApplied Physics Letters
AuthorsSugawara, TakuyaAuthor
Oshima, YasuhiroAuthor
Sreenivasan, RaghavasimhanAuthor
McIntyre, Paul C.Author
Year2007 (March 12)Volume90
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.2472197Search in ResearchGate
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Mindat Ref. ID8552811Long-form Identifiermindat:1:5:8552811:8
GUID0
Full ReferenceSugawara, Takuya, Oshima, Yasuhiro, Sreenivasan, Raghavasimhan, McIntyre, Paul C. (2007) Electrical properties of germanium/metal-oxide gate stacks with atomic layer deposition grown hafnium-dioxide and plasma-synthesized interface layers. Applied Physics Letters, 90 (11). 112912pp. doi:10.1063/1.2472197
Plain TextSugawara, Takuya, Oshima, Yasuhiro, Sreenivasan, Raghavasimhan, McIntyre, Paul C. (2007) Electrical properties of germanium/metal-oxide gate stacks with atomic layer deposition grown hafnium-dioxide and plasma-synthesized interface layers. Applied Physics Letters, 90 (11). 112912pp. doi:10.1063/1.2472197
In(2007, March) Applied Physics Letters Vol. 90 (11) AIP Publishing

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Oshima, Yasuhiro, Shandalov, Michael, Sun, Yun, Pianetta, Piero, McIntyre, Paul C. (2009) Hafnium oxide/germanium oxynitride gate stacks on germanium: Capacitance scaling and interface state density. Applied Physics Letters, 94 (18). 183102pp. doi:10.1063/1.3116624
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