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Swaminathan, Shankar, Shandalov, Michael, Oshima, Yasuhiro, McIntyre, Paul C. (2010) Bilayer metal oxide gate insulators for scaled Ge-channel metal-oxide-semiconductor devices. Applied Physics Letters, 96 (8). 82904pp. doi:10.1063/1.3313946

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Reference TypeJournal (article/letter/editorial)
TitleBilayer metal oxide gate insulators for scaled Ge-channel metal-oxide-semiconductor devices
JournalApplied Physics Letters
AuthorsSwaminathan, ShankarAuthor
Shandalov, MichaelAuthor
Oshima, YasuhiroAuthor
McIntyre, Paul C.Author
Year2010 (February 22)Volume96
Issue8
PublisherAIP Publishing
DOIdoi:10.1063/1.3313946Search in ResearchGate
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Mindat Ref. ID8585810Long-form Identifiermindat:1:5:8585810:7
GUID0
Full ReferenceSwaminathan, Shankar, Shandalov, Michael, Oshima, Yasuhiro, McIntyre, Paul C. (2010) Bilayer metal oxide gate insulators for scaled Ge-channel metal-oxide-semiconductor devices. Applied Physics Letters, 96 (8). 82904pp. doi:10.1063/1.3313946
Plain TextSwaminathan, Shankar, Shandalov, Michael, Oshima, Yasuhiro, McIntyre, Paul C. (2010) Bilayer metal oxide gate insulators for scaled Ge-channel metal-oxide-semiconductor devices. Applied Physics Letters, 96 (8). 82904pp. doi:10.1063/1.3313946
In(2010, February) Applied Physics Letters Vol. 96 (8) AIP Publishing

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