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Ahn, Jaesoo, Geppert, Irina, Gunji, Marika, Holland, Martin, Thayne, Iain, Eizenberg, Moshe, McIntyre, Paul C. (2011) Titania/alumina bilayer gate insulators for InGaAs metal-oxide-semiconductor devices. Applied Physics Letters, 99 (23). 232902pp. doi:10.1063/1.3662966

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Reference TypeJournal (article/letter/editorial)
TitleTitania/alumina bilayer gate insulators for InGaAs metal-oxide-semiconductor devices
JournalApplied Physics Letters
AuthorsAhn, JaesooAuthor
Geppert, IrinaAuthor
Gunji, MarikaAuthor
Holland, MartinAuthor
Thayne, IainAuthor
Eizenberg, MosheAuthor
McIntyre, Paul C.Author
Year2011 (December 5)Volume99
Issue23
PublisherAIP Publishing
DOIdoi:10.1063/1.3662966Search in ResearchGate
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Mindat Ref. ID8598051Long-form Identifiermindat:1:5:8598051:2
GUID0
Full ReferenceAhn, Jaesoo, Geppert, Irina, Gunji, Marika, Holland, Martin, Thayne, Iain, Eizenberg, Moshe, McIntyre, Paul C. (2011) Titania/alumina bilayer gate insulators for InGaAs metal-oxide-semiconductor devices. Applied Physics Letters, 99 (23). 232902pp. doi:10.1063/1.3662966
Plain TextAhn, Jaesoo, Geppert, Irina, Gunji, Marika, Holland, Martin, Thayne, Iain, Eizenberg, Moshe, McIntyre, Paul C. (2011) Titania/alumina bilayer gate insulators for InGaAs metal-oxide-semiconductor devices. Applied Physics Letters, 99 (23). 232902pp. doi:10.1063/1.3662966
In(2011, December) Applied Physics Letters Vol. 99 (23) AIP Publishing

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Swaminathan, Shankar, Shandalov, Michael, Oshima, Yasuhiro, McIntyre, Paul C. (2010) Bilayer metal oxide gate insulators for scaled Ge-channel metal-oxide-semiconductor devices. Applied Physics Letters, 96 (8). 82904pp. doi:10.1063/1.3313946
Tang, Kechao, Winter, Roy, Zhang, Liangliang, Droopad, Ravi, Eizenberg, Moshe, McIntyre, Paul C. (2015) Border trap reduction in Al2O3/InGaAs gate stacks. Applied Physics Letters, 107 (20). 202102pp. doi:10.1063/1.4936100
Winter, R., Krylov, I., Ahn, J., McIntyre, P. C., Eizenberg, M. (2014) The effect of post oxide deposition annealing on the effective work function in metal/Al2O3/InGaAs gate stack. Applied Physics Letters, 104 (20). 202103pp. doi:10.1063/1.4879246
Krylov, Igor, Ritter, Dan, Eizenberg, Moshe (2015) The physical origin of dispersion in accumulation in InGaAs based metal oxide semiconductor gate stacks. Journal of Applied Physics, 117 (17). 174501pp. doi:10.1063/1.4919600
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Kornblum, Lior, Paska, Yair, Rothschild, Jonathan A., Haick, Hossam, Eizenberg, Moshe (2011) Probing the electrostatics of self-assembled monolayers by means of beveled metal-oxide-semiconductor structures. Applied Physics Letters, 99 (23). 233508pp. doi:10.1063/1.3665630
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