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Xie, Qi, Deduytsche, Davy, Schaekers, Marc, Caymax, Matty, Delabie, Annelies, Qu, Xin-Ping, Detavernier, Christophe (2010) Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer. Applied Physics Letters, 97 (11). 112905pp. doi:10.1063/1.3490710

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Reference TypeJournal (article/letter/editorial)
TitleImplementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer
JournalApplied Physics Letters
AuthorsXie, QiAuthor
Deduytsche, DavyAuthor
Schaekers, MarcAuthor
Caymax, MattyAuthor
Delabie, AnneliesAuthor
Qu, Xin-PingAuthor
Detavernier, ChristopheAuthor
Year2010 (September 13)Volume97
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.3490710Search in ResearchGate
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Mindat Ref. ID8586581Long-form Identifiermindat:1:5:8586581:5
GUID0
Full ReferenceXie, Qi, Deduytsche, Davy, Schaekers, Marc, Caymax, Matty, Delabie, Annelies, Qu, Xin-Ping, Detavernier, Christophe (2010) Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer. Applied Physics Letters, 97 (11). 112905pp. doi:10.1063/1.3490710
Plain TextXie, Qi, Deduytsche, Davy, Schaekers, Marc, Caymax, Matty, Delabie, Annelies, Qu, Xin-Ping, Detavernier, Christophe (2010) Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer. Applied Physics Letters, 97 (11). 112905pp. doi:10.1063/1.3490710
In(2010, September) Applied Physics Letters Vol. 97 (11) AIP Publishing

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