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Fujisaki, Sumiko, Ishiwara, Hiroshi, Fujisaki, Yoshihisa (2007) Low-voltage operation of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer capacitors and metal-ferroelectric-insulator-semiconductor diodes. Applied Physics Letters, 90 (16). 162902pp. doi:10.1063/1.2723678

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Reference TypeJournal (article/letter/editorial)
TitleLow-voltage operation of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer capacitors and metal-ferroelectric-insulator-semiconductor diodes
JournalApplied Physics Letters
AuthorsFujisaki, SumikoAuthor
Ishiwara, HiroshiAuthor
Fujisaki, YoshihisaAuthor
Year2007 (April 16)Volume90
Issue16
PublisherAIP Publishing
DOIdoi:10.1063/1.2723678Search in ResearchGate
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Mindat Ref. ID8553487Long-form Identifiermindat:1:5:8553487:2
GUID0
Full ReferenceFujisaki, Sumiko, Ishiwara, Hiroshi, Fujisaki, Yoshihisa (2007) Low-voltage operation of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer capacitors and metal-ferroelectric-insulator-semiconductor diodes. Applied Physics Letters, 90 (16). 162902pp. doi:10.1063/1.2723678
Plain TextFujisaki, Sumiko, Ishiwara, Hiroshi, Fujisaki, Yoshihisa (2007) Low-voltage operation of ferroelectric poly(vinylidene fluoride-trifluoroethylene) copolymer capacitors and metal-ferroelectric-insulator-semiconductor diodes. Applied Physics Letters, 90 (16). 162902pp. doi:10.1063/1.2723678
In(2007, April) Applied Physics Letters Vol. 90 (16) AIP Publishing

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Fujisaki, Yoshihisa, Kijima, Takeshi, Ishiwara, Hiroshi (2001) High-performance metal–ferroelectric–insulator–semiconductor structures with a damage-free and hydrogen-free silicon–nitride buffer layer. Applied Physics Letters, 78 (9). 1285-1287 doi:10.1063/1.1351535
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