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Hums, C., Bläsing, J., Dadgar, A., Diez, A., Hempel, T., Christen, J., Krost, A., Lorenz, K., Alves, E. (2007) Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range. Applied Physics Letters, 90 (2). 22105pp. doi:10.1063/1.2424649

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Reference TypeJournal (article/letter/editorial)
TitleMetal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range
JournalApplied Physics Letters
AuthorsHums, C.Author
Bläsing, J.Author
Dadgar, A.Author
Diez, A.Author
Hempel, T.Author
Christen, J.Author
Krost, A.Author
Lorenz, K.Author
Alves, E.Author
Year2007 (January 8)Volume90
Issue2
PublisherAIP Publishing
DOIdoi:10.1063/1.2424649Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8554007Long-form Identifiermindat:1:5:8554007:7
GUID0
Full ReferenceHums, C., Bläsing, J., Dadgar, A., Diez, A., Hempel, T., Christen, J., Krost, A., Lorenz, K., Alves, E. (2007) Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range. Applied Physics Letters, 90 (2). 22105pp. doi:10.1063/1.2424649
Plain TextHums, C., Bläsing, J., Dadgar, A., Diez, A., Hempel, T., Christen, J., Krost, A., Lorenz, K., Alves, E. (2007) Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range. Applied Physics Letters, 90 (2). 22105pp. doi:10.1063/1.2424649
In(2007, January) Applied Physics Letters Vol. 90 (2) AIP Publishing

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Hums, C., Bläsing, J., Dadgar, A., Diez, A., Hempel, T., Christen, J., Krost, A., Lorenz, K., Alves, E. (2007) Erratum: “Metal-organic vapor phase epitaxy and properties of AlInN in the whole compositional range” [Appl. Phys. Lett. 90, 022105 (2007)]. Applied Physics Letters, 91 (13). 139901pp. doi:10.1063/1.2785981
Gadanecz, A., Bläsing, J., Dadgar, A., Hums, C., Krost, A. (2007) Thermal stability of metal organic vapor phase epitaxy grown AlInN. Applied Physics Letters, 90 (22). 221906pp. doi:10.1063/1.2743744
Schulze, F., Dadgar, A., Bläsing, J., Hempel, T., Diez, A., Christen, J., Krost, A. (2006) Growth of single-domain GaN layers on Si(001) by metalorganic vapor-phase epitaxy. Journal of Crystal Growth, 289 (2). 485-488 doi:10.1016/j.jcrysgro.2005.12.073
Ravash, Roghaiyeh, Bläsing, Jürgen, Hempel, Thomas, Noltemeyer, Martin, Dadgar, Armin, Christen, Jürgen, Krost, Alois (2009) Metal organic vapor phase epitaxy growth of single crystalline GaN on planar Si(211) substrates. Applied Physics Letters, 95 (24). 242101pp. doi:10.1063/1.3272673
Hums, C., Finger, T., Hempel, T., Christen, J., Dadgar, A., Hoffmann, A., Krost, A. (2007) Fabry-Perot effects in InGaN∕GaN heterostructures on Si-substrate. Journal of Applied Physics, 101 (3). 33113pp. doi:10.1063/1.2434010
Krost, A., Berger, C., Bläsing, J., Franke, A., Hempel, T., Dadgar, A., Christen, J. (2010) Strain evaluation in AlInN/GaN Bragg mirrors by in situ curvature measurements and ex situ x-ray grazing incidence and transmission scattering. Applied Physics Letters, 97 (18). 181105pp. doi:10.1063/1.3514241
Krost, A., Christen, J., Oleynik, N., Dadgar, A., Deiter, S., Bläsing, J., Krtschil, A., Forster, D., Bertram, F., Diez, A. (2004) Ostwald ripening and flattening of epitaxial ZnO layers during in situ annealing in metalorganic vapor phase epitaxy. Applied Physics Letters, 85 (9). 1496-1498 doi:10.1063/1.1785871
Heinze, S., Krtschil, A., Bläsing, J., Hempel, T., Veit, P., Dadgar, A., Christen, J., Krost, A. (2007) Homoepitaxial growth of ZnO by metalorganic vapor phase epitaxy in two-dimensional growth mode. Journal of Crystal Growth, 308 (1). 170-175 doi:10.1016/j.jcrysgro.2007.07.024
Dadgar, A., Poschenrieder, M., Reiher, A., Bläsing, J., Christen, J., Krtschil, A., Finger, T., Hempel, T., Diez, A., Krost, A. (2003) Reduction of stress at the initial stages of GaN growth on Si(111). Applied Physics Letters, 82 (1). 28-30 doi:10.1063/1.1534940
Dadgar, A, Schulze, F, Wienecke, M, Gadanecz, A, Bläsing, J, Veit, P, Hempel, T, Diez, A, Christen, J, Krost, A (2007) Epitaxy of GaN on silicon—impact of symmetry and surface reconstruction. New Journal of Physics, 9. 389 doi:10.1088/1367-2630/9/10/389
Krost, A., Dadgar, A., Bläsing, J., Diez, A., Hempel, T., Petzold, S., Christen, J., Clos, R. (2004) Evolution of stress in GaN heteroepitaxy on AlN∕Si(111): From hydrostatic compressive to biaxial tensile. Applied Physics Letters, 85 (16). 3441-3443 doi:10.1063/1.1808237
 
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