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Then, H. W., Feng, M., Holonyak, N. (2007) Optical bandwidth enhancement by operation and modulation of the first excited state of a transistor laser. Applied Physics Letters, 91 (18). 183505pp. doi:10.1063/1.2805014

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Reference TypeJournal (article/letter/editorial)
TitleOptical bandwidth enhancement by operation and modulation of the first excited state of a transistor laser
JournalApplied Physics Letters
AuthorsThen, H. W.Author
Feng, M.Author
Holonyak, N.Author
Year2007 (October 29)Volume91
Issue18
PublisherAIP Publishing
DOIdoi:10.1063/1.2805014Search in ResearchGate
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Mindat Ref. ID8557071Long-form Identifiermindat:1:5:8557071:3
GUID0
Full ReferenceThen, H. W., Feng, M., Holonyak, N. (2007) Optical bandwidth enhancement by operation and modulation of the first excited state of a transistor laser. Applied Physics Letters, 91 (18). 183505pp. doi:10.1063/1.2805014
Plain TextThen, H. W., Feng, M., Holonyak, N. (2007) Optical bandwidth enhancement by operation and modulation of the first excited state of a transistor laser. Applied Physics Letters, 91 (18). 183505pp. doi:10.1063/1.2805014
In(2007, October) Applied Physics Letters Vol. 91 (18) AIP Publishing

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Then, H. W., Walter, G., Feng, M., Holonyak, N. (2008) Optical bandwidth enhancement of heterojunction bipolar transistor laser operation with an auxiliary base signal. Applied Physics Letters, 93 (16). 163504pp. doi:10.1063/1.3000635
Feng, M., Holonyak, N., Then, H. W., Walter, G. (2007) Charge control analysis of transistor laser operation. Applied Physics Letters, 91 (5). 53501pp. doi:10.1063/1.2767172
Then, H. W., Walter, G., Feng, M., Holonyak, N. (2007) Collector characteristics and the differential optical gain of a quantum-well transistor laser. Applied Physics Letters, 91 (24). 243508pp. doi:10.1063/1.2824817
Then, H. W., Feng, M., Holonyak, N. (2009) Bandwidth extension by trade-off of electrical and optical gain in a transistor laser: Three-terminal control. Applied Physics Letters, 94 (1). 13509pp. doi:10.1063/1.3068489
Then, H. W., Tan, F., Feng, M., Holonyak, N. (2012) Transistor laser optical and electrical linearity enhancement with collector current feedback. Applied Physics Letters, 100 (22). 221104pp. doi:10.1063/1.4723874
Walter, G., Wu, C. H., Then, H. W., Feng, M., Holonyak, N. (2009) 4.3 GHz optical bandwidth light emitting transistor. Applied Physics Letters, 94 (24). 241101pp. doi:10.1063/1.3153146
Wu, C. H., Walter, G., Then, H. W., Feng, M., Holonyak, N. (2009) Scaling of light emitting transistor for multigigahertz optical bandwidth. Applied Physics Letters, 94 (17). 171101pp. doi:10.1063/1.3126642
Chan, R., Feng, M., Holonyak, N., Walter, G. (2005) Microwave operation and modulation of a transistor laser. Applied Physics Letters, 86 (13). 131114pp. doi:10.1063/1.1889243
Feng, M., Holonyak, N., Then, H. W., Wu, C. H., Walter, G. (2009) Tunnel junction transistor laser. Applied Physics Letters, 94 (4). 41118pp. doi:10.1063/1.3077020
Then, H. W., Feng, M., Holonyak, N. (2010) Physics of base charge dynamics in the three port transistor laser. Applied Physics Letters, 96 (11). 113509pp. doi:10.1063/1.3364143
Then, H. W., Wu, C. H., Feng, M., Holonyak, N., Walter, G. (2010) Stochastic base doping and quantum-well enhancement of recombination in an n-p-n light-emitting transistor or transistor laser. Applied Physics Letters, 96 (26). 263505pp. doi:10.1063/1.3458708
 
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