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Tanner, Carey M., Perng, Ya-Chuan, Frewin, Christopher, Saddow, Stephen E., Chang, Jane P. (2007) Electrical performance of Al2O3 gate dielectric films deposited by atomic layer deposition on 4H-SiC. Applied Physics Letters, 91 (20). 203510pp. doi:10.1063/1.2805742

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Reference TypeJournal (article/letter/editorial)
TitleElectrical performance of Al2O3 gate dielectric films deposited by atomic layer deposition on 4H-SiC
JournalApplied Physics Letters
AuthorsTanner, Carey M.Author
Perng, Ya-ChuanAuthor
Frewin, ChristopherAuthor
Saddow, Stephen E.Author
Chang, Jane P.Author
Year2007 (November 12)Volume91
Issue20
PublisherAIP Publishing
DOIdoi:10.1063/1.2805742Search in ResearchGate
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Mindat Ref. ID8557617Long-form Identifiermindat:1:5:8557617:9
GUID0
Full ReferenceTanner, Carey M., Perng, Ya-Chuan, Frewin, Christopher, Saddow, Stephen E., Chang, Jane P. (2007) Electrical performance of Al2O3 gate dielectric films deposited by atomic layer deposition on 4H-SiC. Applied Physics Letters, 91 (20). 203510pp. doi:10.1063/1.2805742
Plain TextTanner, Carey M., Perng, Ya-Chuan, Frewin, Christopher, Saddow, Stephen E., Chang, Jane P. (2007) Electrical performance of Al2O3 gate dielectric films deposited by atomic layer deposition on 4H-SiC. Applied Physics Letters, 91 (20). 203510pp. doi:10.1063/1.2805742
In(2007, November) Applied Physics Letters Vol. 91 (20) AIP Publishing

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Tanner, Carey M., Toney, Michael F., Lu, Jun, Blom, Hans-Olof, Sawkar-Mathur, Monica, Tafesse, Melat A., Chang, Jane P. (2007) Engineering epitaxial γ-Al2O3 gate dielectric films on 4H-SiC. Journal of Applied Physics, 102 (10). 104112pp. doi:10.1063/1.2812609
Tanner, Carey M., Sawkar-Mathur, Monica, Lu, Jun, Blom, Hans-Olof, Toney, Michael F., Chang, Jane P. (2007) Structural properties of epitaxial γ-Al2O3 (111) thin films on 4H-SiC (0001). Applied Physics Letters, 90 (6). 61916pp. doi:10.1063/1.2435978
Suri, Rahul, Kirkpatrick, Casey J., Lichtenwalner, Daniel J., Misra, Veena (2010) Energy-band alignment of Al2O3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4H–SiC. Applied Physics Letters, 96 (4). 42903pp. doi:10.1063/1.3291620
Tanner, Carey M., Choi, Jongwoo, Chang, Jane P. (2007) Electronic structure and band alignment at the HfO2∕4H-SiC interface. Journal of Applied Physics, 101 (3). 34108pp. doi:10.1063/1.2432402
Wolborski, Maciej, Rooth, Mårten, Bakowski, Mietek, Hallén, Anders (2007) Characterization of HfO2 films deposited on 4H-SiC by atomic layer deposition. Journal of Applied Physics, 101 (12). 124105pp. doi:10.1063/1.2734956
Park, Pan Kwi, Cha, Eun-Soo, Kang, Sang-Won (2007) Interface effect on dielectric constant of HfO2∕Al2O3 nanolaminate films deposited by plasma-enhanced atomic layer deposition. Applied Physics Letters, 90 (23). 232906pp. doi:10.1063/1.2746416
Coletti, C., Frewin, C. L., Saddow, S. E., Hetzel, M., Virojanadara, C., Starke, U. (2007) Surface studies of hydrogen etched 3C-SiC(001) on Si(001). Applied Physics Letters, 91 (6). 61914pp. doi:10.1063/1.2768870
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Perng, Ya-Chuan, Kim, Taeseung, Chang, Jane P. (2014) Effect of residual H 2 O on epitaxial AlN film growth on 4H-SiC by alternating doses of TMA and NH 3. Applied Surface Science, 314. 1047-1052 doi:10.1016/j.apsusc.2014.06.041
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