Watch the Dallas Symposium LIVE, and fundraiser auction
Ticket proceeds support mindat.org! - click here...
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Suri, Rahul, Kirkpatrick, Casey J., Lichtenwalner, Daniel J., Misra, Veena (2010) Energy-band alignment of Al2O3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4H–SiC. Applied Physics Letters, 96 (4). 42903pp. doi:10.1063/1.3291620

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleEnergy-band alignment of Al2O3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4H–SiC
JournalApplied Physics Letters
AuthorsSuri, RahulAuthor
Kirkpatrick, Casey J.Author
Lichtenwalner, Daniel J.Author
Misra, VeenaAuthor
Year2010 (January 25)Volume96
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.3291620Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8584977Long-form Identifiermindat:1:5:8584977:4
GUID0
Full ReferenceSuri, Rahul, Kirkpatrick, Casey J., Lichtenwalner, Daniel J., Misra, Veena (2010) Energy-band alignment of Al2O3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4H–SiC. Applied Physics Letters, 96 (4). 42903pp. doi:10.1063/1.3291620
Plain TextSuri, Rahul, Kirkpatrick, Casey J., Lichtenwalner, Daniel J., Misra, Veena (2010) Energy-band alignment of Al2O3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4H–SiC. Applied Physics Letters, 96 (4). 42903pp. doi:10.1063/1.3291620
In(2010, January) Applied Physics Letters Vol. 96 (4) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Suri, Rahul, Lee, Bongmook, Lichtenwalner, Daniel J., Biswas, Nivedita, Misra, Veena (2008) Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric. Applied Physics Letters, 93 (19). 193504pp. doi:10.1063/1.3007978
Suri, Rahul, Lichtenwalner, Daniel J., Misra, Veena (2010) Interfacial self cleaning during atomic layer deposition and annealing of HfO2 films on native (100)-GaAs substrates. Applied Physics Letters, 96 (11). 112905pp. doi:10.1063/1.3357422
Suri, Rahul, Lichtenwalner, Daniel J., Misra, Veena (2008) Impact of elemental arsenic on electrical characteristics of metal-oxide-semiconductor capacitors on GaAs using atomic-layer deposited HfO2 gate dielectric. Applied Physics Letters, 92 (24). 243506pp. doi:10.1063/1.2949079
Lichtenwalner, Daniel J., Misra, Veena, Dhar, Sarit, Ryu, Sei-Hyung, Agarwal, Anant (2009) High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing atomic layer deposited Al2O3 gate dielectric. Applied Physics Letters, 95 (15). 152113pp. doi:10.1063/1.3251076
Jayanti, Srikant, Yang, Xiangyu, Lichtenwalner, Daniel J., Misra, Veena (2010) Technique to improve performance of Al2O3 interpoly dielectric using a La2O3 interface scavenging layer for floating gate memory structures. Applied Physics Letters, 96 (9). 92905pp. doi:10.1063/1.3355547
Haney, Sarah Kay, Misra, Veena, Lichtenwalner, Daniel J., Agarwal, Anant K. (2013) Investigation of Nitrided Atomic-Layer-Deposited Oxides in 4H-SiC Capacitors and MOSFETs. Materials Science Forum, 740. 707-710 doi:10.4028/www.scientific.net/msf.740-742.707
Kirkpatrick, Casey, Lee, Bongmook, Yang, Xiangyu, Misra, Veena (2011) Performance improvement of AlGaN/GaN high electron mobility transistors with atomic layer deposition (ALD) of SiO2 and HfAlO dielectrics. physica status solidi (c), 8 (7). 2445-2447 doi:10.1002/pssc.201001064
Tanner, Carey M., Perng, Ya-Chuan, Frewin, Christopher, Saddow, Stephen E., Chang, Jane P. (2007) Electrical performance of Al2O3 gate dielectric films deposited by atomic layer deposition on 4H-SiC. Applied Physics Letters, 91 (20). 203510pp. doi:10.1063/1.2805742
Zhang, Feng, Sun, Guosheng, Zheng, Liu, Liu, Shengbei, Liu, Bin, Dong, Lin, Wang, Lei, Zhao, Wanshun, Liu, Xingfang, Yan, Guoguo, Tian, Lixin, Zeng, Yiping (2013) Interfacial study and energy-band alignment of annealed Al2O3 films prepared by atomic layer deposition on 4H-SiC. Journal of Applied Physics, 113 (4). 44112pp. doi:10.1063/1.4789380
Liu, J. W., Liao, M. Y., Imura, M., Koide, Y. (2012) Band offsets of Al2O3 and HfO2 oxides deposited by atomic layer deposition technique on hydrogenated diamond. Applied Physics Letters, 101 (25). 252108pp. doi:10.1063/1.4772985
Ramanan, Narayanan, Lee, Bongmook, Misra, Veena (2015) Accurate characterization and understanding of interface trap density trends between atomic layer deposited dielectrics and AlGaN/GaN with bonding constraint theory. Applied Physics Letters, 106 (24). 243503pp. doi:10.1063/1.4922799
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: August 22, 2025 18:10:13
Go to top of page