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Suri, Rahul, Lichtenwalner, Daniel J., Misra, Veena (2010) Interfacial self cleaning during atomic layer deposition and annealing of HfO2 films on native (100)-GaAs substrates. Applied Physics Letters, 96 (11). 112905pp. doi:10.1063/1.3357422

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Reference TypeJournal (article/letter/editorial)
TitleInterfacial self cleaning during atomic layer deposition and annealing of HfO2 films on native (100)-GaAs substrates
JournalApplied Physics Letters
AuthorsSuri, RahulAuthor
Lichtenwalner, Daniel J.Author
Misra, VeenaAuthor
Year2010 (March 15)Volume96
Issue11
PublisherAIP Publishing
DOIdoi:10.1063/1.3357422Search in ResearchGate
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Mindat Ref. ID8582019Long-form Identifiermindat:1:5:8582019:5
GUID0
Full ReferenceSuri, Rahul, Lichtenwalner, Daniel J., Misra, Veena (2010) Interfacial self cleaning during atomic layer deposition and annealing of HfO2 films on native (100)-GaAs substrates. Applied Physics Letters, 96 (11). 112905pp. doi:10.1063/1.3357422
Plain TextSuri, Rahul, Lichtenwalner, Daniel J., Misra, Veena (2010) Interfacial self cleaning during atomic layer deposition and annealing of HfO2 films on native (100)-GaAs substrates. Applied Physics Letters, 96 (11). 112905pp. doi:10.1063/1.3357422
In(2010, March) Applied Physics Letters Vol. 96 (11) AIP Publishing

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Suri, Rahul, Kirkpatrick, Casey J., Lichtenwalner, Daniel J., Misra, Veena (2010) Energy-band alignment of Al2O3 and HfAlO gate dielectrics deposited by atomic layer deposition on 4H–SiC. Applied Physics Letters, 96 (4). 42903pp. doi:10.1063/1.3291620
Suri, Rahul, Lichtenwalner, Daniel J., Misra, Veena (2008) Impact of elemental arsenic on electrical characteristics of metal-oxide-semiconductor capacitors on GaAs using atomic-layer deposited HfO2 gate dielectric. Applied Physics Letters, 92 (24). 243506pp. doi:10.1063/1.2949079
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Lichtenwalner, Daniel J., Misra, Veena, Dhar, Sarit, Ryu, Sei-Hyung, Agarwal, Anant (2009) High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing atomic layer deposited Al2O3 gate dielectric. Applied Physics Letters, 95 (15). 152113pp. doi:10.1063/1.3251076
Hackley, Justin C., Demaree, J. Derek, Gougousi, Theodosia (2008) Interface of atomic layer deposited HfO2 films on GaAs (100) surfaces. Applied Physics Letters, 92 (16). 162902pp. doi:10.1063/1.2908223
Kim, Hyoungsub, McIntyre, Paul C., Chui, Chi On, Saraswat, Krishna C., Cho, Mann-Ho (2004) Interfacial characteristics of HfO2 grown on nitrided Ge (100) substrates by atomic-layer deposition. Applied Physics Letters, 85 (14). 2902-2904 doi:10.1063/1.1797564
Chang, C.-H., Chiou, Y.-K., Chang, Y.-C., Lee, K.-Y., Lin, T.-D., Wu, T.-B., Hong, M., Kwo, J. (2006) Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As. Applied Physics Letters, 89 (24). 242911pp. doi:10.1063/1.2405387
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