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(2012) Realization of high-quality HfO2 on In0.53Ga0.47As by in-situ atomic-layer-deposition. Applied Physics Letters, 100 (17). 172110pp. doi:10.1063/1.4706261

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Reference TypeJournal (article/letter/editorial)
TitleRealization of high-quality HfO2 on In0.53Ga0.47As by in-situ atomic-layer-deposition
JournalApplied Physics Letters
Year2012 (April 23)Volume100
Issue17
PublisherAIP Publishing
DOIdoi:10.1063/1.4706261Search in ResearchGate
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Mindat Ref. ID8601672Long-form Identifiermindat:1:5:8601672:6
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Full Reference(2012) Realization of high-quality HfO2 on In0.53Ga0.47As by in-situ atomic-layer-deposition. Applied Physics Letters, 100 (17). 172110pp. doi:10.1063/1.4706261
Plain Text(2012) Realization of high-quality HfO2 on In0.53Ga0.47As by in-situ atomic-layer-deposition. Applied Physics Letters, 100 (17). 172110pp. doi:10.1063/1.4706261
In(2012, April) Applied Physics Letters Vol. 100 (17) AIP Publishing

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(2013) High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2. Applied Physics Letters, 103 (25). 253509pp. doi:10.1063/1.4852975
Dong, H., Brennan, B., Zhernokletov, D., Kim, J., Hinkle, C. L., Wallace, R. M. (2013) In situ study of HfO2 atomic layer deposition on InP(100). Applied Physics Letters, 102 (17). 171602pp. doi:10.1063/1.4803486
Wertheim, G. K. (2014) Synchrotron radiation photoemission study of interfacial electronic structure of HfO2 on In0.53Ga0.47As(001)-4 × 2 from atomic layer deposition. Applied Physics Letters, 104 (4). 42904pp. doi:10.1063/1.4863440
Ye, Liwang, Gougousi, Theodosia (2014) In situ infrared spectroscopy study of the interface self-cleaning during the atomic layer deposition of HfO2 on GaAs(100) surfaces. Applied Physics Letters, 105 (12). 121604pp. doi:10.1063/1.4896501
Baldovino, S., Spiga, S., Scarel, G., Fanciulli, M. (2007) Effects of the oxygen precursor on the interface between (100)Si and HfO2 films grown by atomic layer deposition. Applied Physics Letters, 91 (17). 172905pp. doi:10.1063/1.2802040
Chang, Hyo Sik, Hwang, Hyunsang, Cho, Mann-Ho, Moon, Dae Won (2005) Investigation of the initial stage of growth of HfO2 films on Si(100) grown by atomic-layer deposition using in situ medium energy ion scattering. Applied Physics Letters, 86 (3). 31906pp. doi:10.1063/1.1850596
Yoshida, Toshiyuki, Hashizume, Tamotsu (2012) Studies on atomic layer deposition Al2O3/In0.53Ga0.47As interface formation mechanism based on air-gap capacitance-voltage method. Applied Physics Letters, 101 (12). 122102pp. doi:10.1063/1.4753927
Chung, K. B., Whang, C. N., Cho, M.-H., Ko, D.-H. (2006) Structural and stoichiometric change in nitrided HfO2 grown on Ge(100) by atomic layer deposition. Applied Physics Letters, 88 (11). 111913pp. doi:10.1063/1.2186739
Liu, Han, Xu, Kun, Zhang, Xujie, Ye, Peide D. (2012) The integration of high-k dielectric on two-dimensional crystals by atomic layer deposition. Applied Physics Letters, 100 (15). 152115pp. doi:10.1063/1.3703595
Kim, Hyoungsub, McIntyre, Paul C., Chui, Chi On, Saraswat, Krishna C., Cho, Mann-Ho (2004) Interfacial characteristics of HfO2 grown on nitrided Ge (100) substrates by atomic-layer deposition. Applied Physics Letters, 85 (14). 2902-2904 doi:10.1063/1.1797564
Dlubak, B., Kidambi, P. R., Weatherup, R. S., Hofmann, S., Robertson, J. (2012) Substrate-assisted nucleation of ultra-thin dielectric layers on graphene by atomic layer deposition. Applied Physics Letters, 100 (17). 173113pp. doi:10.1063/1.4707376
 
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