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Poborchii, Vladimir, Tada, Tetsuya, Kanayama, Toshihiko (2007) Study of stress in a shallow-trench-isolated Si structure using polarized confocal near-UV Raman microscopy of its cross section. Applied Physics Letters, 91 (24). 241902pp. doi:10.1063/1.2825286

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Reference TypeJournal (article/letter/editorial)
TitleStudy of stress in a shallow-trench-isolated Si structure using polarized confocal near-UV Raman microscopy of its cross section
JournalApplied Physics Letters
AuthorsPoborchii, VladimirAuthor
Tada, TetsuyaAuthor
Kanayama, ToshihikoAuthor
Year2007 (December 10)Volume91
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.2825286Search in ResearchGate
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Mindat Ref. ID8558587Long-form Identifiermindat:1:5:8558587:6
GUID0
Full ReferencePoborchii, Vladimir, Tada, Tetsuya, Kanayama, Toshihiko (2007) Study of stress in a shallow-trench-isolated Si structure using polarized confocal near-UV Raman microscopy of its cross section. Applied Physics Letters, 91 (24). 241902pp. doi:10.1063/1.2825286
Plain TextPoborchii, Vladimir, Tada, Tetsuya, Kanayama, Toshihiko (2007) Study of stress in a shallow-trench-isolated Si structure using polarized confocal near-UV Raman microscopy of its cross section. Applied Physics Letters, 91 (24). 241902pp. doi:10.1063/1.2825286
In(2007, December) Applied Physics Letters Vol. 91 (24) AIP Publishing

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Poborchii, Vladimir, Tada, Tetsuya, Kanayama, Toshihiko (2006) High-spatial-resolution Raman microscopy of stress in shallow-trench-isolated Si structures. Applied Physics Letters, 89 (23). 233505pp. doi:10.1063/1.2400057
Tada, Tetsuya, Poborchii, Vladimir, Kanayama, Toshihiko (2010) Study of stress distribution in a cleaved Si shallow trench isolation structure using confocal micro-Raman system. Journal of Applied Physics, 107 (11). 113539pp. doi:10.1063/1.3437628
Poborchii, Vladimir, Tada, Tetsuya, Usuda, Koji, Kanayama, Toshihiko (2011) Polarized Raman microscopy of anisotropic stress relaxation in strained-Si-on-insulator stripes. Applied Physics Letters, 99 (19). 191911pp. doi:10.1063/1.3660709
Poborchii, Vladimir, Tada, Tetsuya, Kanayama, Toshihiko (2009) Edge-enhanced Raman scattering in Si nanostripes. Applied Physics Letters, 94 (13). 131907pp. doi:10.1063/1.3110964
Tada, Tetsuya, Poborchii, Vladimir, Kanayama, Toshihiko (2012) Analysis of micro-Raman spectra combined with electromagnetic simulation and stress simulation for local stress distribution in Si devices. Applied Physics Letters, 101 (24). 243511pp. doi:10.1063/1.4772210
Poborchii, Vladimir, Tada, Tetsuya, Kanayama, Toshihiko (2010) Observation of the forbidden doublet optical phonon in Raman spectra of strained Si for stress analysis. Applied Physics Letters, 97 (4). 41915pp. doi:10.1063/1.3474604
Poborchii, Vladimir, Tada, Tetsuya, Kanayama, Toshihiko (2005) Subwavelength-Resolution Raman Microscopy of Si Structures Using Metal-Particle-Topped AFM Probe. Japanese Journal of Applied Physics, 44. doi:10.1143/jjap.44.l202
Poborchii, Vladimir V., Tada, Tetsuya, Kanayama, Toshihiko (1999) A visible–near infrared range photonic crystal made up of Si nanopillars. Applied Physics Letters, 75 (21). 3276-3278 doi:10.1063/1.125323
Poborchii, Vladimir, Tada, Tetsuya, Kanayama, Toshihiko, Geshev, Pavel (2009) Optimization of tip material and shape for near-UV TERS in Si structures. Journal of Raman Spectroscopy, 40 (10). 1377-1385 doi:10.1002/jrs.2417
Poborchii, Vladimir V., Tada, Tetsuya, Kanayama, Toshihiko (2002) Photonic-band-gap properties of two-dimensional lattices of Si nanopillars. Journal of Applied Physics, 91 (5). 3299-3305 doi:10.1063/1.1446659
Poborchii, Vladimir, Tada, Tetsuya, Kanayama, Toshihiko (2012) Enhancement of the Strained Si Forbidden Doublet Transverse Optical Phonon Raman Band for Quantitative Stress Measurement. Japanese Journal of Applied Physics, 51. 78002 doi:10.1143/jjap.51.078002
 
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