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Poborchii, Vladimir, Tada, Tetsuya, Kanayama, Toshihiko (2010) Observation of the forbidden doublet optical phonon in Raman spectra of strained Si for stress analysis. Applied Physics Letters, 97 (4). 41915pp. doi:10.1063/1.3474604

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Reference TypeJournal (article/letter/editorial)
TitleObservation of the forbidden doublet optical phonon in Raman spectra of strained Si for stress analysis
JournalApplied Physics Letters
AuthorsPoborchii, VladimirAuthor
Tada, TetsuyaAuthor
Kanayama, ToshihikoAuthor
Year2010 (July 26)Volume97
Issue4
PublisherAIP Publishing
DOIdoi:10.1063/1.3474604Search in ResearchGate
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Mindat Ref. ID8589929Long-form Identifiermindat:1:5:8589929:2
GUID0
Full ReferencePoborchii, Vladimir, Tada, Tetsuya, Kanayama, Toshihiko (2010) Observation of the forbidden doublet optical phonon in Raman spectra of strained Si for stress analysis. Applied Physics Letters, 97 (4). 41915pp. doi:10.1063/1.3474604
Plain TextPoborchii, Vladimir, Tada, Tetsuya, Kanayama, Toshihiko (2010) Observation of the forbidden doublet optical phonon in Raman spectra of strained Si for stress analysis. Applied Physics Letters, 97 (4). 41915pp. doi:10.1063/1.3474604
In(2010, July) Applied Physics Letters Vol. 97 (4) AIP Publishing

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Poborchii, Vladimir, Tada, Tetsuya, Kanayama, Toshihiko (2012) Enhancement of the Strained Si Forbidden Doublet Transverse Optical Phonon Raman Band for Quantitative Stress Measurement. Japanese Journal of Applied Physics, 51. 78002 doi:10.1143/jjap.51.078002
Poborchii, Vladimir, Tada, Tetsuya, Kanayama, Toshihiko (2012) Enhancement of the Strained Si Forbidden Doublet Transverse Optical Phonon Raman Band for Quantitative Stress Measurement. Japanese Journal of Applied Physics, 51 (7) 78002 doi:10.7567/jjap.51.078002
Tada, Tetsuya, Poborchii, Vladimir, Kanayama, Toshihiko (2012) Analysis of micro-Raman spectra combined with electromagnetic simulation and stress simulation for local stress distribution in Si devices. Applied Physics Letters, 101 (24). 243511pp. doi:10.1063/1.4772210
Poborchii, Vladimir, Tada, Tetsuya, Usuda, Koji, Kanayama, Toshihiko (2011) Polarized Raman microscopy of anisotropic stress relaxation in strained-Si-on-insulator stripes. Applied Physics Letters, 99 (19). 191911pp. doi:10.1063/1.3660709
Poborchii, Vladimir, Tada, Tetsuya, Kanayama, Toshihiko (2009) Edge-enhanced Raman scattering in Si nanostripes. Applied Physics Letters, 94 (13). 131907pp. doi:10.1063/1.3110964
Poborchii, Vladimir, Tada, Tetsuya, Kanayama, Toshihiko (2006) High-spatial-resolution Raman microscopy of stress in shallow-trench-isolated Si structures. Applied Physics Letters, 89 (23). 233505pp. doi:10.1063/1.2400057
Tada, Tetsuya, Poborchii, Vladimir, Kanayama, Toshihiko (2010) Study of stress distribution in a cleaved Si shallow trench isolation structure using confocal micro-Raman system. Journal of Applied Physics, 107 (11). 113539pp. doi:10.1063/1.3437628
Poborchii, Vladimir, Tada, Tetsuya, Morita, Yukinori, Kanayama, Toshihiko (2013) Ultraviolet Raman spectra of single uncoated and SiO2-coated silicon-on-insulator nanowires: Phonon boundary scattering, wave-vector relaxation and stress. Applied Physics Letters, 103 (15). 153104pp. doi:10.1063/1.4821781
Poborchii, Vladimir, Tada, Tetsuya, Kanayama, Toshihiko (2007) Study of stress in a shallow-trench-isolated Si structure using polarized confocal near-UV Raman microscopy of its cross section. Applied Physics Letters, 91 (24). 241902pp. doi:10.1063/1.2825286
Poborchii, Vladimir, Tada, Tetsuya, Kanayama, Toshihiko (2005) Giant heating of Si nanoparticles by weak laser light: Optical microspectroscopic study and application to particle modification. Journal of Applied Physics, 97 (10). 104323pp. doi:10.1063/1.1904157
Poborchii, Vladimir V., Tada, Tetsuya, Kanayama, Toshihiko (1999) A visible–near infrared range photonic crystal made up of Si nanopillars. Applied Physics Letters, 75 (21). 3276-3278 doi:10.1063/1.125323
 
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