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Yoon, Youngki, Guo, Jing (2007) Effect of edge roughness in graphene nanoribbon transistors. Applied Physics Letters, 91 (7). 73103pp. doi:10.1063/1.2769764

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Reference TypeJournal (article/letter/editorial)
TitleEffect of edge roughness in graphene nanoribbon transistors
JournalApplied Physics Letters
AuthorsYoon, YoungkiAuthor
Guo, JingAuthor
Year2007 (August 13)Volume91
Issue7
PublisherAIP Publishing
DOIdoi:10.1063/1.2769764Search in ResearchGate
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Mindat Ref. ID8559963Long-form Identifiermindat:1:5:8559963:9
GUID0
Full ReferenceYoon, Youngki, Guo, Jing (2007) Effect of edge roughness in graphene nanoribbon transistors. Applied Physics Letters, 91 (7). 73103pp. doi:10.1063/1.2769764
Plain TextYoon, Youngki, Guo, Jing (2007) Effect of edge roughness in graphene nanoribbon transistors. Applied Physics Letters, 91 (7). 73103pp. doi:10.1063/1.2769764
In(2007, August) Applied Physics Letters Vol. 91 (7) AIP Publishing

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Yoon, Youngki, Salahuddin, Sayeef (2012) Dissipative transport in rough edge graphene nanoribbon tunnel transistors. Applied Physics Letters, 101 (26). 263501pp. doi:10.1063/1.4772532
Yoon, Youngki, Salahuddin, Sayeef (2010) Inverse temperature dependence of subthreshold slope in graphene nanoribbon tunneling transistors. Applied Physics Letters, 96 (1). 13510pp. doi:10.1063/1.3280379
Ouyang, Yijian, Yoon, Youngki, Fodor, James K., Guo, Jing (2006) Comparison of performance limits for carbon nanoribbon and carbon nanotube transistors. Applied Physics Letters, 89 (20). 203107pp. doi:10.1063/1.2387876
Yoon, Youngki, Lin, Jenshan, Pearton, Stephen J., Guo, Jing (2007) Role of grain boundaries in ZnO nanowire field-effect transistors. Journal of Applied Physics, 101 (2). 24301pp. doi:10.1063/1.2422747
Yoon, Youngki, Nikonov, Dmitri E., Salahuddin, Sayeef (2011) Role of phonon scattering in graphene nanoribbon transistors: Nonequilibrium Green’s function method with real space approach. Applied Physics Letters, 98 (20). 203503pp. doi:10.1063/1.3589365
Zhao, Pei, Guo, Jing (2009) Modeling edge effects in graphene nanoribbon field-effect transistors with real and mode space methods. Journal of Applied Physics, 105 (3). 34503pp. doi:10.1063/1.3073875
Hong, Seokmin, Yoon, Youngki, Guo, Jing (2008) Metal-semiconductor junction of graphene nanoribbons. Applied Physics Letters, 92 (8). 83107pp. doi:10.1063/1.2885095
Ouyang, Yijian, Wang, Xinran, Dai, Hongjie, Guo, Jing (2008) Carrier scattering in graphene nanoribbon field-effect transistors. Applied Physics Letters, 92 (24). 243124pp. doi:10.1063/1.2949749
Luisier, Mathieu, Klimeck, Gerhard (2009) Performance analysis of statistical samples of graphene nanoribbon tunneling transistors with line edge roughness. Applied Physics Letters, 94 (22). 223505pp. doi:10.1063/1.3140505
Basu, D., Gilbert, M. J., Register, L. F., Banerjee, S. K., MacDonald, A. H. (2008) Effect of edge roughness on electronic transport in graphene nanoribbon channel metal-oxide-semiconductor field-effect transistors. Applied Physics Letters, 92 (4). 42114pp. doi:10.1063/1.2839330
Kaniselvan, Manasa, Yoon, Youngki (2021) Strain-tuning PtSe2 for high ON-current lateral tunnel field-effect transistors. Applied Physics Letters, 119 (7) 73102pp. doi:10.1063/5.0053789
 
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