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Yoon, Youngki, Salahuddin, Sayeef (2010) Inverse temperature dependence of subthreshold slope in graphene nanoribbon tunneling transistors. Applied Physics Letters, 96 (1). 13510pp. doi:10.1063/1.3280379

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Reference TypeJournal (article/letter/editorial)
TitleInverse temperature dependence of subthreshold slope in graphene nanoribbon tunneling transistors
JournalApplied Physics Letters
AuthorsYoon, YoungkiAuthor
Salahuddin, SayeefAuthor
Year2010 (January 4)Volume96
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.3280379Search in ResearchGate
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Mindat Ref. ID8581682Long-form Identifiermindat:1:5:8581682:8
GUID0
Full ReferenceYoon, Youngki, Salahuddin, Sayeef (2010) Inverse temperature dependence of subthreshold slope in graphene nanoribbon tunneling transistors. Applied Physics Letters, 96 (1). 13510pp. doi:10.1063/1.3280379
Plain TextYoon, Youngki, Salahuddin, Sayeef (2010) Inverse temperature dependence of subthreshold slope in graphene nanoribbon tunneling transistors. Applied Physics Letters, 96 (1). 13510pp. doi:10.1063/1.3280379
In(2010, January) Applied Physics Letters Vol. 96 (1) AIP Publishing

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Yoon, Youngki, Salahuddin, Sayeef (2012) Dissipative transport in rough edge graphene nanoribbon tunnel transistors. Applied Physics Letters, 101 (26). 263501pp. doi:10.1063/1.4772532
Yoon, Youngki, Nikonov, Dmitri E., Salahuddin, Sayeef (2011) Role of phonon scattering in graphene nanoribbon transistors: Nonequilibrium Green’s function method with real space approach. Applied Physics Letters, 98 (20). 203503pp. doi:10.1063/1.3589365
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Ganapathi, Kartik, Yoon, Youngki, Salahuddin, Sayeef (2010) Analysis of InAs vertical and lateral band-to-band tunneling transistors: Leveraging vertical tunneling for improved performance. Applied Physics Letters, 97 (3). 33504pp. doi:10.1063/1.3466908
Yoon, Youngki, Kim, Sung Hwan, Salahuddin, Sayeef (2010) Performance analysis of carbon-based tunnel field-effect transistors for high frequency and ultralow power applications. Applied Physics Letters, 97 (23). 233504pp. doi:10.1063/1.3524826
Yoon, Youngki, Guo, Jing (2007) Effect of edge roughness in graphene nanoribbon transistors. Applied Physics Letters, 91 (7). 73103pp. doi:10.1063/1.2769764
Ouyang, Yijian, Yoon, Youngki, Fodor, James K., Guo, Jing (2006) Comparison of performance limits for carbon nanoribbon and carbon nanotube transistors. Applied Physics Letters, 89 (20). 203107pp. doi:10.1063/1.2387876
Kang, Jiahao, He, Yu, Zhang, Jinyu, Yu, Xinxin, Guan, Ximeng, Yu, Zhiping (2010) Modeling and simulation of uniaxial strain effects in armchair graphene nanoribbon tunneling field effect transistors. Applied Physics Letters, 96 (25). 252105pp. doi:10.1063/1.3456533
Sarkar, Deblina, Krall, Michael, Banerjee, Kaustav (2010) Electron-hole duality during band-to-band tunneling process in graphene-nanoribbon tunnel-field-effect-transistors. Applied Physics Letters, 97 (26). 263109pp. doi:10.1063/1.3528338
Majumdar, Kausik, Murali, Kota V. R. M., Bhat, Navakanta, Lin, Yu-Ming (2010) Intrinsic limits of subthreshold slope in biased bilayer graphene transistor. Applied Physics Letters, 96 (12). 123504pp. doi:10.1063/1.3364142
Michetti, Paolo, Cheli, Martina, Iannaccone, Giuseppe (2010) Model of tunneling transistors based on graphene on SiC. Applied Physics Letters, 96 (13). 133508pp. doi:10.1063/1.3361657
 
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