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Kang, Jiahao, He, Yu, Zhang, Jinyu, Yu, Xinxin, Guan, Ximeng, Yu, Zhiping (2010) Modeling and simulation of uniaxial strain effects in armchair graphene nanoribbon tunneling field effect transistors. Applied Physics Letters, 96 (25). 252105pp. doi:10.1063/1.3456533

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Reference TypeJournal (article/letter/editorial)
TitleModeling and simulation of uniaxial strain effects in armchair graphene nanoribbon tunneling field effect transistors
JournalApplied Physics Letters
AuthorsKang, JiahaoAuthor
He, YuAuthor
Zhang, JinyuAuthor
Yu, XinxinAuthor
Guan, XimengAuthor
Yu, ZhipingAuthor
Year2010 (June 21)Volume96
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.3456533Search in ResearchGate
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Mindat Ref. ID8584584Long-form Identifiermindat:1:5:8584584:8
GUID0
Full ReferenceKang, Jiahao, He, Yu, Zhang, Jinyu, Yu, Xinxin, Guan, Ximeng, Yu, Zhiping (2010) Modeling and simulation of uniaxial strain effects in armchair graphene nanoribbon tunneling field effect transistors. Applied Physics Letters, 96 (25). 252105pp. doi:10.1063/1.3456533
Plain TextKang, Jiahao, He, Yu, Zhang, Jinyu, Yu, Xinxin, Guan, Ximeng, Yu, Zhiping (2010) Modeling and simulation of uniaxial strain effects in armchair graphene nanoribbon tunneling field effect transistors. Applied Physics Letters, 96 (25). 252105pp. doi:10.1063/1.3456533
In(2010, June) Applied Physics Letters Vol. 96 (25) AIP Publishing

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Sarkar, Deblina, Krall, Michael, Banerjee, Kaustav (2010) Electron-hole duality during band-to-band tunneling process in graphene-nanoribbon tunnel-field-effect-transistors. Applied Physics Letters, 97 (26). 263109pp. doi:10.1063/1.3528338
Lyu, Hongming, Lu, Qi, Huang, Yilin, Ma, Teng, Zhang, Jinyu, Wu, Xiaoming, Yu, Zhiping, Ren, Wencai, Cheng, Hui-Ming, Wu, Huaqiang, Qian, He (2015) Graphene Distributed Amplifiers: Generating Desirable Gain for Graphene Field-Effect Transistors. Scientific Reports, 5. doi:10.1038/srep17649
Lyu, Hongming, Lu, Qi, Liu, Jinbiao, Wu, Xiaoming, Zhang, Jinyu, Li, Junfeng, Niu, Jiebin, Yu, Zhiping, Wu, Huaqiang, Qian, He (2016) Deep-submicron Graphene Field-Effect Transistors with State-of-Art fmax. Scientific Reports, 6. doi:10.1038/srep35717
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