Reference Type | Journal (article/letter/editorial) |
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Title | A comparison of CuO and Cu2O hole-injection layers for low voltage organic devices |
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Journal | Applied Physics Letters |
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Authors | Murdoch, G. B. | Author |
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Greiner, M. | Author |
Helander, M. G. | Author |
Wang, Z. B. | Author |
Lu, Z. H. | Author |
Year | 2008 (August 25) | Volume | 93 |
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Issue | 8 |
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Publisher | AIP Publishing |
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DOI | doi:10.1063/1.2966140Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 8571502 | Long-form Identifier | mindat:1:5:8571502:4 |
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GUID | 0 |
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Full Reference | Murdoch, G. B., Greiner, M., Helander, M. G., Wang, Z. B., Lu, Z. H. (2008) A comparison of CuO and Cu2O hole-injection layers for low voltage organic devices. Applied Physics Letters, 93 (8). 83309pp. doi:10.1063/1.2966140 |
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Plain Text | Murdoch, G. B., Greiner, M., Helander, M. G., Wang, Z. B., Lu, Z. H. (2008) A comparison of CuO and Cu2O hole-injection layers for low voltage organic devices. Applied Physics Letters, 93 (8). 83309pp. doi:10.1063/1.2966140 |
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In | (2008, August) Applied Physics Letters Vol. 93 (8) AIP Publishing |
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