Reference Type | Journal (article/letter/editorial) |
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Title | MoO3 doped 4,4′-N,N′-dicarbazole-biphenyl for low voltage organic light emitting diodes |
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Journal | Applied Physics Letters |
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Authors | Qiu, J. | Author |
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Wang, Z. B. | Author |
Helander, M. G. | Author |
Lu, Z. H. | Author |
Year | 2011 (October 10) | Volume | 99 |
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Issue | 15 |
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Publisher | AIP Publishing |
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DOI | doi:10.1063/1.3644159Search in ResearchGate |
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| Generate Citation Formats |
Mindat Ref. ID | 8596514 | Long-form Identifier | mindat:1:5:8596514:2 |
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GUID | 0 |
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Full Reference | Qiu, J., Wang, Z. B., Helander, M. G., Lu, Z. H. (2011) MoO3 doped 4,4′-N,N′-dicarbazole-biphenyl for low voltage organic light emitting diodes. Applied Physics Letters, 99 (15). 153305pp. doi:10.1063/1.3644159 |
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Plain Text | Qiu, J., Wang, Z. B., Helander, M. G., Lu, Z. H. (2011) MoO3 doped 4,4′-N,N′-dicarbazole-biphenyl for low voltage organic light emitting diodes. Applied Physics Letters, 99 (15). 153305pp. doi:10.1063/1.3644159 |
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In | (2011, October) Applied Physics Letters Vol. 99 (15) AIP Publishing |
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