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Roeckerath, M., Lopes, J. M. J., Özben, E. Durğun, Urban, C., Schubert, J., Mantl, S., Jia, Y., Schlom, D. G. (2010) Investigation of terbium scandate as an alternative gate dielectric in fully depleted transistors. Applied Physics Letters, 96 (1). 13513pp. doi:10.1063/1.3275731

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Reference TypeJournal (article/letter/editorial)
TitleInvestigation of terbium scandate as an alternative gate dielectric in fully depleted transistors
JournalApplied Physics Letters
AuthorsRoeckerath, M.Author
Lopes, J. M. J.Author
Özben, E. DurğunAuthor
Urban, C.Author
Schubert, J.Author
Mantl, S.Author
Jia, Y.Author
Schlom, D. G.Author
Year2010 (January 4)Volume96
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.3275731Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8581632Long-form Identifiermindat:1:5:8581632:3
GUID0
Full ReferenceRoeckerath, M., Lopes, J. M. J., Özben, E. Durğun, Urban, C., Schubert, J., Mantl, S., Jia, Y., Schlom, D. G. (2010) Investigation of terbium scandate as an alternative gate dielectric in fully depleted transistors. Applied Physics Letters, 96 (1). 13513pp. doi:10.1063/1.3275731
Plain TextRoeckerath, M., Lopes, J. M. J., Özben, E. Durğun, Urban, C., Schubert, J., Mantl, S., Jia, Y., Schlom, D. G. (2010) Investigation of terbium scandate as an alternative gate dielectric in fully depleted transistors. Applied Physics Letters, 96 (1). 13513pp. doi:10.1063/1.3275731
In(2010, January) Applied Physics Letters Vol. 96 (1) AIP Publishing

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