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Kordoš, P., Stoklas, R., Gregušová, D., Gaži, Š., Novák, J. (2010) Trapping effects in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor investigated by temperature dependent conductance measurements. Applied Physics Letters, 96 (1). 13505pp. doi:10.1063/1.3275754

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Reference TypeJournal (article/letter/editorial)
TitleTrapping effects in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor investigated by temperature dependent conductance measurements
JournalApplied Physics Letters
AuthorsKordoš, P.Author
Stoklas, R.Author
Gregušová, D.Author
Gaži, Š.Author
Novák, J.Author
Year2010 (January 4)Volume96
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.3275754Search in ResearchGate
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Mindat Ref. ID8581633Long-form Identifiermindat:1:5:8581633:2
GUID0
Full ReferenceKordoš, P., Stoklas, R., Gregušová, D., Gaži, Š., Novák, J. (2010) Trapping effects in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor investigated by temperature dependent conductance measurements. Applied Physics Letters, 96 (1). 13505pp. doi:10.1063/1.3275754
Plain TextKordoš, P., Stoklas, R., Gregušová, D., Gaži, Š., Novák, J. (2010) Trapping effects in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor investigated by temperature dependent conductance measurements. Applied Physics Letters, 96 (1). 13505pp. doi:10.1063/1.3275754
In(2010, January) Applied Physics Letters Vol. 96 (1) AIP Publishing

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Kordoš, P., Gregušová, D., Stoklas, R., Čičo, K., Novák, J. (2007) Improved transport properties of Al2O3∕AlGaN∕GaN metal-oxide-semiconductor heterostructure field-effect transistor. Applied Physics Letters, 90 (12). 123513pp. doi:10.1063/1.2716846
Kordoš, P., Stoklas, R., Gregušová, D., Novák, J. (2009) Characterization of AlGaN/GaN metal-oxide-semiconductor field-effect transistors by frequency dependent conductance analysis. Applied Physics Letters, 94 (22). 223512pp. doi:10.1063/1.3148830
Stoklas, R., Gregušová, D., Novák, J., Vescan, A., Kordoš, P. (2008) Investigation of trapping effects in AlGaN/GaN/Si field-effect transistors by frequency dependent capacitance and conductance analysis. Applied Physics Letters, 93 (12). 124103pp. doi:10.1063/1.2990627
Stoklas, R., Gaži, Š., Gregušová, D., Novák, J., Kordoš, P. (2008) Enhancement of effective carrier velocity in AlGaN/GaN MOSHFETs with Al2O3 gate oxide. physica status solidi (c), 5 (6). 1935-1937 doi:10.1002/pssc.200778484
Gregušová, D., Stoklas, R., Mizue, Ch., Hori, Y., Novák, J., Hashizume, T., Kordoš, P. (2010) Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition. Journal of Applied Physics, 107 (10). 106104pp. doi:10.1063/1.3428492
Gregušová, Dagmar, Gaži, vStefan, Sofer, Zdeněk, Stoklas, Roman, Dobročka, Edmund, Mikulics, Martin, Greguš, Ján, Novák, Jozef, Kordoš, Peter (2010) Oxidized Al Film as an Insulation Layer in AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field Effect Transistors. Japanese Journal of Applied Physics, 49 (4) 46504 doi:10.1143/jjap.49.046504
Gucmann, F., Gregušová, D., Stoklas, R., Dérer, J., Kúdela, R., Fröhlich, K., Kordoš, P. (2014) InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors with oxygen-plasma oxide and Al2O3 double-layer insulator. Applied Physics Letters, 105 (18). 183504pp. doi:10.1063/1.4901170
Kordoš, P., Donoval, D., Florovič, M., Kováč, J., Gregušová, D. (2008) Investigation of trap effects in AlGaN∕GaN field-effect transistors by temperature dependent threshold voltage analysis. Applied Physics Letters, 92 (15). 152113pp. doi:10.1063/1.2911727
Kordoš, P., Kúdela, R., Stoklas, R., Čičo, K., Mikulics, M., Gregušová, D., Novák, J. (2012) Aluminum oxide as passivation and gate insulator in GaAs-based field-effect transistors prepared in situ by metal-organic vapor deposition. Applied Physics Letters, 100 (14). 142113pp. doi:10.1063/1.3701584
Mikulics, M., Stoklas, R., Dadgar, A., Gregušová, D., Novák, J., Grützmacher, D., Krost, A., Kordoš, P. (2010) InAlN/GaN/Si heterostructures and field-effect transistors with lattice matched and tensely or compressively strained InAlN. Applied Physics Letters, 97 (17). 173505pp. doi:10.1063/1.3507885
Gregušová, D., Stoklas, R., Čičo, K., Heidelberger, G., Marso, M., Novák, J., Kordoš, P. (2007) Characterization of AlGaN/GaN MOSHFETs with Al2O3 as gate oxide. physica status solidi (c), 4 (7). 2720-2723 doi:10.1002/pssc.200674828
 
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