Mikulics, M., Stoklas, R., Dadgar, A., Gregušová, D., Novák, J., Grützmacher, D., Krost, A., Kordoš, P. (2010) InAlN/GaN/Si heterostructures and field-effect transistors with lattice matched and tensely or compressively strained InAlN. Applied Physics Letters, 97 (17). 173505pp. doi:10.1063/1.3507885
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | InAlN/GaN/Si heterostructures and field-effect transistors with lattice matched and tensely or compressively strained InAlN | ||
| Journal | Applied Physics Letters | ||
| Authors | Mikulics, M. | Author | |
| Stoklas, R. | Author | ||
| Dadgar, A. | Author | ||
| Gregušová, D. | Author | ||
| Novák, J. | Author | ||
| Grützmacher, D. | Author | ||
| Krost, A. | Author | ||
| Kordoš, P. | Author | ||
| Year | 2010 (October 25) | Volume | 97 |
| Issue | 17 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.3507885Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 8587674 | Long-form Identifier | mindat:1:5:8587674:1 |
| GUID | 0 | ||
| Full Reference | Mikulics, M., Stoklas, R., Dadgar, A., Gregušová, D., Novák, J., Grützmacher, D., Krost, A., Kordoš, P. (2010) InAlN/GaN/Si heterostructures and field-effect transistors with lattice matched and tensely or compressively strained InAlN. Applied Physics Letters, 97 (17). 173505pp. doi:10.1063/1.3507885 | ||
| Plain Text | Mikulics, M., Stoklas, R., Dadgar, A., Gregušová, D., Novák, J., Grützmacher, D., Krost, A., Kordoš, P. (2010) InAlN/GaN/Si heterostructures and field-effect transistors with lattice matched and tensely or compressively strained InAlN. Applied Physics Letters, 97 (17). 173505pp. doi:10.1063/1.3507885 | ||
| In | (2010, October) Applied Physics Letters Vol. 97 (17) AIP Publishing | ||
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