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Song, Taeseup, Park, Won Il, Paik, Ungyu (2010) Epitaxial growth of one-dimensional GaN nanostructures with enhanced near-band edge emission by chemical vapor deposition. Applied Physics Letters, 96 (1). 11105pp. doi:10.1063/1.3279147

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Reference TypeJournal (article/letter/editorial)
TitleEpitaxial growth of one-dimensional GaN nanostructures with enhanced near-band edge emission by chemical vapor deposition
JournalApplied Physics Letters
AuthorsSong, TaeseupAuthor
Park, Won IlAuthor
Paik, UngyuAuthor
Year2010 (January 4)Volume96
Issue1
PublisherAIP Publishing
DOIdoi:10.1063/1.3279147Search in ResearchGate
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Mindat Ref. ID8581664Long-form Identifiermindat:1:5:8581664:2
GUID0
Full ReferenceSong, Taeseup, Park, Won Il, Paik, Ungyu (2010) Epitaxial growth of one-dimensional GaN nanostructures with enhanced near-band edge emission by chemical vapor deposition. Applied Physics Letters, 96 (1). 11105pp. doi:10.1063/1.3279147
Plain TextSong, Taeseup, Park, Won Il, Paik, Ungyu (2010) Epitaxial growth of one-dimensional GaN nanostructures with enhanced near-band edge emission by chemical vapor deposition. Applied Physics Letters, 96 (1). 11105pp. doi:10.1063/1.3279147
In(2010, January) Applied Physics Letters Vol. 96 (1) AIP Publishing

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