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Huang, Hsin-Hung, Shih, Wen-Chieh, Lai, Chih-Huang (2010) Nonpolar resistive switching in the Pt/MgO/Pt nonvolatile memory device. Applied Physics Letters, 96 (19). 193505pp. doi:10.1063/1.3429024

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Reference TypeJournal (article/letter/editorial)
TitleNonpolar resistive switching in the Pt/MgO/Pt nonvolatile memory device
JournalApplied Physics Letters
AuthorsHuang, Hsin-HungAuthor
Shih, Wen-ChiehAuthor
Lai, Chih-HuangAuthor
Year2010 (May 10)Volume96
Issue19
PublisherAIP Publishing
DOIdoi:10.1063/1.3429024Search in ResearchGate
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Mindat Ref. ID8583409Long-form Identifiermindat:1:5:8583409:1
GUID0
Full ReferenceHuang, Hsin-Hung, Shih, Wen-Chieh, Lai, Chih-Huang (2010) Nonpolar resistive switching in the Pt/MgO/Pt nonvolatile memory device. Applied Physics Letters, 96 (19). 193505pp. doi:10.1063/1.3429024
Plain TextHuang, Hsin-Hung, Shih, Wen-Chieh, Lai, Chih-Huang (2010) Nonpolar resistive switching in the Pt/MgO/Pt nonvolatile memory device. Applied Physics Letters, 96 (19). 193505pp. doi:10.1063/1.3429024
In(2010, May) Applied Physics Letters Vol. 96 (19) AIP Publishing

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