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Yu, Xuegong, Song, Lihui, Yang, Deren, Kittler, Martin, Rozgonyi, George A. (2010) Modulation of 1.5 μm dislocation-related luminescence emitted from a direct silicon bonded interface by external bias. Applied Physics Letters, 96 (21). 211120pp. doi:10.1063/1.3431580

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Reference TypeJournal (article/letter/editorial)
TitleModulation of 1.5 μm dislocation-related luminescence emitted from a direct silicon bonded interface by external bias
JournalApplied Physics Letters
AuthorsYu, XuegongAuthor
Song, LihuiAuthor
Yang, DerenAuthor
Kittler, MartinAuthor
Rozgonyi, George A.Author
Year2010 (May 24)Volume96
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.3431580Search in ResearchGate
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Mindat Ref. ID8583818Long-form Identifiermindat:1:5:8583818:5
GUID0
Full ReferenceYu, Xuegong, Song, Lihui, Yang, Deren, Kittler, Martin, Rozgonyi, George A. (2010) Modulation of 1.5 μm dislocation-related luminescence emitted from a direct silicon bonded interface by external bias. Applied Physics Letters, 96 (21). 211120pp. doi:10.1063/1.3431580
Plain TextYu, Xuegong, Song, Lihui, Yang, Deren, Kittler, Martin, Rozgonyi, George A. (2010) Modulation of 1.5 μm dislocation-related luminescence emitted from a direct silicon bonded interface by external bias. Applied Physics Letters, 96 (21). 211120pp. doi:10.1063/1.3431580
In(2010, May) Applied Physics Letters Vol. 96 (21) AIP Publishing

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Yu, Xuegong, Lu, Jinggang, Rozgonyi, George (2008) Capacitance transient and current-/capacitance-voltage study of direct silicon bonded (110)∕(100) interface. Applied Physics Letters, 92 (26). 262102pp. doi:10.1063/1.2952513
Jiang, Tingting, Yu, Xuegong, Gu, Xin, Yang, Deren, Rozgonyi, George (2012) Hydrogenation of interface states at a clean grain boundary in the direct silicon bonded wafer. physica status solidi (a), 209 (5). 990-993 doi:10.1002/pssa.201127536
Lei, Dong, Yu, Xuegong, Song, Lihui, Gu, Xin, Li, Genhu, Yang, Deren (2011) Modulation of atomic-layer-deposited Al2O3film passivation of silicon surface by rapid thermal processing. Applied Physics Letters, 99 (5). 52103pp. doi:10.1063/1.3616145
Yu, Xuegong, Lu, Jinggang, Rozgonyi, George (2008) Impact of Cu contamination on the electrical properties of a direct silicon bonded (110)/(100) interfacial grain boundary. Journal of Applied Physics, 104 (11). 113702pp. doi:10.1063/1.3032655
Song, Lihui, Yu, Xuegong, Yang, Deren (2019) A review on graphene-silicon Schottky junction interface. Journal of Alloys and Compounds, 806. 63-70 doi:10.1016/j.jallcom.2019.07.259
Song, Lihui, Xie, Meng, Yu, Xuegong, Yang, Deren (2017) Characterization of silicon surface states at clean and copper contaminated condition via transient capacitance measurement. Applied Physics Letters, 111 (15). 152103pp. doi:10.1063/1.5001117
Yu, X., Seifert, W., Vyvenko, O. F., Kittler, M., Wilhelm, T., Reiche, M. (2008) A pure 1.5 μm electroluminescence from metal-oxide-silicon tunneling diode using dislocation network. Applied Physics Letters, 93 (4). 41108pp. doi:10.1063/1.2965126
Song, Lihui, Hu, Zechen, Lin, Dehang, Yang, Deren, Yu, Xuegong (2022) Progress of hydrogenation engineering in crystalline silicon solar cells: a review. Journal of Physics D: Applied Physics, 55 (45) 453002 doi:10.1088/1361-6463/ac9066
Yu, X., Li, X., Fan, R., Yang, D., Kittler, M., Reiche, M., Seibt, M., Rozgonyi, G. (2010) Effect of Au contamination on the electrical characteristics of a “model” small-angle grain boundary in n-type direct silicon bonded wafer. Journal of Applied Physics, 108 (5). 53719pp. doi:10.1063/1.3471817
Yu, Xuegong, Wang, Peng, Chen, Peng, Li, Xiaoqiang, Yang, Deren (2010) Suppression of boron–oxygen defects in p-type Czochralski silicon by germanium doping. Applied Physics Letters, 97 (5). 51903pp. doi:10.1063/1.3475486
Yu, Xuegong, Wang, Peng, Yang, Deren (2010) Effect of germanium on the kinetics of boron-oxygen defect generation and dissociation in Czochralski silicon. Applied Physics Letters, 97 (16). 162107pp. doi:10.1063/1.3505499
 
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