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Mazzeo, G., Yablonovitch, E., Jiang, H. W., Bai, Y., Fitzgerald, E. A. (2010) Conduction band discontinuity and electron confinement at the SixGe1−x/Ge interface. Applied Physics Letters, 96 (21). 213501pp. doi:10.1063/1.3432066

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Reference TypeJournal (article/letter/editorial)
TitleConduction band discontinuity and electron confinement at the SixGe1−x/Ge interface
JournalApplied Physics Letters
AuthorsMazzeo, G.Author
Yablonovitch, E.Author
Jiang, H. W.Author
Bai, Y.Author
Fitzgerald, E. A.Author
Year2010 (May 24)Volume96
Issue21
PublisherAIP Publishing
DOIdoi:10.1063/1.3432066Search in ResearchGate
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Mindat Ref. ID8583840Long-form Identifiermindat:1:5:8583840:4
GUID0
Full ReferenceMazzeo, G., Yablonovitch, E., Jiang, H. W., Bai, Y., Fitzgerald, E. A. (2010) Conduction band discontinuity and electron confinement at the SixGe1−x/Ge interface. Applied Physics Letters, 96 (21). 213501pp. doi:10.1063/1.3432066
Plain TextMazzeo, G., Yablonovitch, E., Jiang, H. W., Bai, Y., Fitzgerald, E. A. (2010) Conduction band discontinuity and electron confinement at the SixGe1−x/Ge interface. Applied Physics Letters, 96 (21). 213501pp. doi:10.1063/1.3432066
In(2010, May) Applied Physics Letters Vol. 96 (21) AIP Publishing

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Varahramyan, K. M., Ferrer, D., Tutuc, E., Banerjee, S. K. (2009) Band engineered epitaxial Ge–SixGe1−x core-shell nanowire heterostructures. Applied Physics Letters, 95 (3). 33101pp. doi:10.1063/1.3173811
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Pan, Z., Li, L. H., Lin, Y. W., Sun, B. Q., Jiang, D. S., Ge, W. K. (2001) Conduction band offset and electron effective mass in GaInNAs/GaAs quantum-well structures with low nitrogen concentration. Applied Physics Letters, 78 (15). 2217-2219 doi:10.1063/1.1362335
Zhang, W. F., Nishimula, T., Nagashio, K., Kita, K., Toriumi, A. (2013) Conduction band offset at GeO2/Ge interface determined by internal photoemission and charge-corrected x-ray photoelectron spectroscopies. Applied Physics Letters, 102 (10). 102106pp. doi:10.1063/1.4794417
Smoliner, J., Christanell, R., Hauser, M., Gornik, E., Weimann, G., Ploog, K. (1987) Fowler–Nordheim tunneling and conduction‐band discontinuity in GaAs/GaAlAs high electron mobility transistor structures. Applied Physics Letters, 50 (24). 1727-1729 doi:10.1063/1.97729
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Weng, X., Tian, W., Schlom, D. G., Dickey, E. C. (2010) Structure and chemistry of the (111)Sc2O3/(0001) GaN epitaxial interface. Applied Physics Letters, 96 (24). 241901pp. doi:10.1063/1.3454924
 
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