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Feng, Li-Wei, Chang, Chun-Yen, Chang, Yao-Feng, Chang, Ting-Chang, Wang, Shin-Yuan, Chen, Shih-Ching, Lin, Chao-Cheng, Chen, Shih-Cheng, Chiang, Pei-Wei (2010) Improvement of resistance switching characteristics in a thin FeOx transition layer of TiN/SiO2/FeOx/FePt structure by rapid annealing. Applied Physics Letters, 96 (22). 222108pp. doi:10.1063/1.3428777

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Reference TypeJournal (article/letter/editorial)
TitleImprovement of resistance switching characteristics in a thin FeOx transition layer of TiN/SiO2/FeOx/FePt structure by rapid annealing
JournalApplied Physics Letters
AuthorsFeng, Li-WeiAuthor
Chang, Chun-YenAuthor
Chang, Yao-FengAuthor
Chang, Ting-ChangAuthor
Wang, Shin-YuanAuthor
Chen, Shih-ChingAuthor
Lin, Chao-ChengAuthor
Chen, Shih-ChengAuthor
Chiang, Pei-WeiAuthor
Year2010 (May 31)Volume96
Issue22
PublisherAIP Publishing
DOIdoi:10.1063/1.3428777Search in ResearchGate
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Mindat Ref. ID8583989Long-form Identifiermindat:1:5:8583989:2
GUID0
Full ReferenceFeng, Li-Wei, Chang, Chun-Yen, Chang, Yao-Feng, Chang, Ting-Chang, Wang, Shin-Yuan, Chen, Shih-Ching, Lin, Chao-Cheng, Chen, Shih-Cheng, Chiang, Pei-Wei (2010) Improvement of resistance switching characteristics in a thin FeOx transition layer of TiN/SiO2/FeOx/FePt structure by rapid annealing. Applied Physics Letters, 96 (22). 222108pp. doi:10.1063/1.3428777
Plain TextFeng, Li-Wei, Chang, Chun-Yen, Chang, Yao-Feng, Chang, Ting-Chang, Wang, Shin-Yuan, Chen, Shih-Ching, Lin, Chao-Cheng, Chen, Shih-Cheng, Chiang, Pei-Wei (2010) Improvement of resistance switching characteristics in a thin FeOx transition layer of TiN/SiO2/FeOx/FePt structure by rapid annealing. Applied Physics Letters, 96 (22). 222108pp. doi:10.1063/1.3428777
In(2010, May) Applied Physics Letters Vol. 96 (22) AIP Publishing

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Chang, Yao-Feng, Feng, Li-Wei, Chang, Ting-Chang (2011) Mechanism and characterizations studies of resistive switching effects on a thin FeOx-transition layer of the Ti/TiN/SiO2/FeOx/FePt structure by thermal annealing treatments. Materials Chemistry and Physics, 131. 262-267 doi:10.1016/j.matchemphys.2011.09.037
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