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Kwak, June Sik, Do, Young Ho, Bae, Yoon Cheol, Im, Hyun Sik, Yoo, Jong Hee, Sung, Min Gyu, Hwang, Yun Taek, Hong, Jin Pyo (2010) Roles of interfacial TiOxN1βˆ’x layer and TiN electrode on bipolar resistive switching in TiN/TiO2/TiN frameworks. Applied Physics Letters, 96 (22). 223502pp. doi:10.1063/1.3442499

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Reference TypeJournal (article/letter/editorial)
TitleRoles of interfacial TiOxN1βˆ’x layer and TiN electrode on bipolar resistive switching in TiN/TiO2/TiN frameworks
JournalApplied Physics Letters
AuthorsKwak, June SikAuthor
Do, Young HoAuthor
Bae, Yoon CheolAuthor
Im, Hyun SikAuthor
Yoo, Jong HeeAuthor
Sung, Min GyuAuthor
Hwang, Yun TaekAuthor
Hong, Jin PyoAuthor
Year2010 (May 31)Volume96
Issue22
PublisherAIP Publishing
DOIdoi:10.1063/1.3442499Search in ResearchGate
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Mindat Ref. ID8584055Long-form Identifiermindat:1:5:8584055:1
GUID0
Full ReferenceKwak, June Sik, Do, Young Ho, Bae, Yoon Cheol, Im, Hyun Sik, Yoo, Jong Hee, Sung, Min Gyu, Hwang, Yun Taek, Hong, Jin Pyo (2010) Roles of interfacial TiOxN1βˆ’x layer and TiN electrode on bipolar resistive switching in TiN/TiO2/TiN frameworks. Applied Physics Letters, 96 (22). 223502pp. doi:10.1063/1.3442499
Plain TextKwak, June Sik, Do, Young Ho, Bae, Yoon Cheol, Im, Hyun Sik, Yoo, Jong Hee, Sung, Min Gyu, Hwang, Yun Taek, Hong, Jin Pyo (2010) Roles of interfacial TiOxN1βˆ’x layer and TiN electrode on bipolar resistive switching in TiN/TiO2/TiN frameworks. Applied Physics Letters, 96 (22). 223502pp. doi:10.1063/1.3442499
In(2010, May) Applied Physics Letters Vol. 96 (22) AIP Publishing

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Do, Young Ho, Kwak, June Sik, Bae, Yoon Cheol, Jung, Kyooho, Im, Hyunsik, Hong, Jin Pyo (2009) Hysteretic bipolar resistive switching characteristics in TiO2/TiO2βˆ’x multilayer homojunctions. Applied Physics Letters, 95 (9). 93507pp. doi:10.1063/1.3224179
Rahm Lee, Ah, Cheol Bae, Yoon, Ho Baek, Gwang, Sik Im, Hyun, Pyo Hong, Jin (2013) Multi-level resistive switching observations in asymmetric Pt/Ta2O5βˆ’x/TiOxNy/TiN/Ta2O5βˆ’x/Pt multilayer configurations. Applied Physics Letters, 103 (6). 63505pp. doi:10.1063/1.4818129
Do, Young Ho, Kwak, June Sik, Hong, Jin Pyo, Jung, Kyooho, Im, Hyunsik (2008) Al electrode dependent transition to bipolar resistive switching characteristics in pure TiO2 films. Journal of Applied Physics, 104 (11). 114512pp. doi:10.1063/1.3032896
Bae, Yoon Cheol, Lee, Ah Rahm, Kwak, June Sik, Im, Hyunsik, Do, Young Ho, Hong, Jin Pyo (2011) Transition of metallic and insulating Ti sub-oxides in bipolar resistive switching TiO x /TiO y frameworks due to oxygen vacancy drifts. Applied Physics A, 102. 1009-1013 doi:10.1007/s00339-011-6289-0
Lee, Ah Rahm, Bae, Yoon Cheol, Im, Hyun Sik, Hong, Jin Pyo (2013) Complementary resistive switching mechanism in Ti-based triple TiOx/TiN/TiOx and TiOx/TiOxNy/TiOx matrix. Applied Surface Science, 274. 85-88 doi:10.1016/j.apsusc.2013.02.100
Hyung Kim, Joo, Rahm Lee, Ah, Cheol Bae, Yoon, Ho Baek, Kwang, Sik Im, Hyun, Pyo Hong, Jin (2014) Observation of bias-dependent noise sources in a TiOx/TiOy bipolar resistive switching frame. Applied Physics Letters, 104 (8). 83508pp. doi:10.1063/1.4865783
Lee, Ah Rahm, Cheol Bae, Yoon, Ho Baek, Gwang, Bock Chung, Je, Sung Kang, Tae, Sun Lee, Jong, Park, Jea-Gun, Sik Im, Hyun, Pyo Hong, Jin (2013) Oxygen ion drift-driven dual bipolar hysteresis curves in a single Pt/Ta2O5βˆ’x/TiOxNy framework. Applied Physics Letters, 103 (18). 183510pp. doi:10.1063/1.4828561
Baek, Gwang Ho, Lee, Ah Rahm, Kim, Tae Yoon, Im, Hyun Sik, Hong, Jin Pyo (2016) Oxide stoichiometry-controlled TaOx-based resistive switching behaviors. Applied Physics Letters, 109 (14). 143502pp. doi:10.1063/1.4963884
Kim, Joo Hyung, Bae, Yoon Cheol, Lee, Ah Rahm, Baek, Kwang Ho, Hong, Jin Pyo (2015) Correlative analysis of conducting filament distribution at interfaces and bias-dependent noise sources in TiN/TiOx/Pt and Pt/TiOx/TiOy/Pt bipolar resistive switching frames. Applied Physics Letters, 106 (3). 33506pp. doi:10.1063/1.4906532
Yoon, Ji-Wook, Yoon, Jung Ho, Lee, Jong-Heun, Hwang, Cheol Seong (2014) Impedance spectroscopic analysis on effects of partial oxidation of TiN bottom electrode and microstructure of amorphous and crystalline HfO2 thin films on their bipolar resistive switching. Nanoscale, 6. 6668-6678 doi:10.1039/c4nr00507d
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