Chang, Seongpil, Dong, Ki-Young, Park, Jung-Ho, Oh, Tae-Yeon, Kim, Jong-Woo, Lee, Sang Yeol, Ju, Byeong-Kwon (2010) Scaling down of amorphous indium gallium zinc oxide thin film transistors on the polyethersulfone substrate employing the protection layer of parylene-C for the large-scale integration. Applied Physics Letters, 96 (24). 243504pp. doi:10.1063/1.3454775
| Reference Type | Journal (article/letter/editorial) | ||
|---|---|---|---|
| Title | Scaling down of amorphous indium gallium zinc oxide thin film transistors on the polyethersulfone substrate employing the protection layer of parylene-C for the large-scale integration | ||
| Journal | Applied Physics Letters | ||
| Authors | Chang, Seongpil | Author | |
| Dong, Ki-Young | Author | ||
| Park, Jung-Ho | Author | ||
| Oh, Tae-Yeon | Author | ||
| Kim, Jong-Woo | Author | ||
| Lee, Sang Yeol | Author | ||
| Ju, Byeong-Kwon | Author | ||
| Year | 2010 (June 14) | Volume | 96 |
| Issue | 24 | ||
| Publisher | AIP Publishing | ||
| DOI | doi:10.1063/1.3454775Search in ResearchGate | ||
| Generate Citation Formats | |||
| Mindat Ref. ID | 8584417 | Long-form Identifier | mindat:1:5:8584417:7 |
| GUID | 0 | ||
| Full Reference | Chang, Seongpil, Dong, Ki-Young, Park, Jung-Ho, Oh, Tae-Yeon, Kim, Jong-Woo, Lee, Sang Yeol, Ju, Byeong-Kwon (2010) Scaling down of amorphous indium gallium zinc oxide thin film transistors on the polyethersulfone substrate employing the protection layer of parylene-C for the large-scale integration. Applied Physics Letters, 96 (24). 243504pp. doi:10.1063/1.3454775 | ||
| Plain Text | Chang, Seongpil, Dong, Ki-Young, Park, Jung-Ho, Oh, Tae-Yeon, Kim, Jong-Woo, Lee, Sang Yeol, Ju, Byeong-Kwon (2010) Scaling down of amorphous indium gallium zinc oxide thin film transistors on the polyethersulfone substrate employing the protection layer of parylene-C for the large-scale integration. Applied Physics Letters, 96 (24). 243504pp. doi:10.1063/1.3454775 | ||
| In | (2010, June) Applied Physics Letters Vol. 96 (24) AIP Publishing | ||
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