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Shin, Byungha, Clemens, Jonathon B., Kelly, Michael A., Kummel, Andrew C., McIntyre, Paul C. (2010) Arsenic decapping and half cycle reactions during atomic layer deposition of Al2O3 on In0.53Ga0.47As(001). Applied Physics Letters, 96 (25). 252907pp. doi:10.1063/1.3452336

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Reference TypeJournal (article/letter/editorial)
TitleArsenic decapping and half cycle reactions during atomic layer deposition of Al2O3 on In0.53Ga0.47As(001)
JournalApplied Physics Letters
AuthorsShin, ByunghaAuthor
Clemens, Jonathon B.Author
Kelly, Michael A.Author
Kummel, Andrew C.Author
McIntyre, Paul C.Author
Year2010 (June 21)Volume96
Issue25
PublisherAIP Publishing
DOIdoi:10.1063/1.3452336Search in ResearchGate
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Mindat Ref. ID8584499Long-form Identifiermindat:1:5:8584499:1
GUID0
Full ReferenceShin, Byungha, Clemens, Jonathon B., Kelly, Michael A., Kummel, Andrew C., McIntyre, Paul C. (2010) Arsenic decapping and half cycle reactions during atomic layer deposition of Al2O3 on In0.53Ga0.47As(001). Applied Physics Letters, 96 (25). 252907pp. doi:10.1063/1.3452336
Plain TextShin, Byungha, Clemens, Jonathon B., Kelly, Michael A., Kummel, Andrew C., McIntyre, Paul C. (2010) Arsenic decapping and half cycle reactions during atomic layer deposition of Al2O3 on In0.53Ga0.47As(001). Applied Physics Letters, 96 (25). 252907pp. doi:10.1063/1.3452336
In(2010, June) Applied Physics Letters Vol. 96 (25) AIP Publishing

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