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Le, Son T., Jannaty, P., Zaslavsky, A., Dayeh, S. A., Picraux, S. T. (2010) Growth, electrical rectification, and gate control in axial in situ doped p-n junction germanium nanowires. Applied Physics Letters, 96 (26). 262102pp. doi:10.1063/1.3457862

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Reference TypeJournal (article/letter/editorial)
TitleGrowth, electrical rectification, and gate control in axial in situ doped p-n junction germanium nanowires
JournalApplied Physics Letters
AuthorsLe, Son T.Author
Jannaty, P.Author
Zaslavsky, A.Author
Dayeh, S. A.Author
Picraux, S. T.Author
Year2010 (June 28)Volume96
Issue26
PublisherAIP Publishing
DOIdoi:10.1063/1.3457862Search in ResearchGate
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Mindat Ref. ID8584702Long-form Identifiermindat:1:5:8584702:2
GUID0
Full ReferenceLe, Son T., Jannaty, P., Zaslavsky, A., Dayeh, S. A., Picraux, S. T. (2010) Growth, electrical rectification, and gate control in axial in situ doped p-n junction germanium nanowires. Applied Physics Letters, 96 (26). 262102pp. doi:10.1063/1.3457862
Plain TextLe, Son T., Jannaty, P., Zaslavsky, A., Dayeh, S. A., Picraux, S. T. (2010) Growth, electrical rectification, and gate control in axial in situ doped p-n junction germanium nanowires. Applied Physics Letters, 96 (26). 262102pp. doi:10.1063/1.3457862
In(2010, June) Applied Physics Letters Vol. 96 (26) AIP Publishing

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