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Kazazis, D., Jannaty, P., Zaslavsky, A., Le Royer, C., Tabone, C., Clavelier, L., Cristoloveanu, S. (2009) Tunneling field-effect transistor with epitaxial junction in thin germanium-on-insulator. Applied Physics Letters, 94 (26). 263508pp. doi:10.1063/1.3168646

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Reference TypeJournal (article/letter/editorial)
TitleTunneling field-effect transistor with epitaxial junction in thin germanium-on-insulator
JournalApplied Physics Letters
AuthorsKazazis, D.Author
Jannaty, P.Author
Zaslavsky, A.Author
Le Royer, C.Author
Tabone, C.Author
Clavelier, L.Author
Cristoloveanu, S.Author
Year2009 (June 29)Volume94
Issue26
PublisherAIP Publishing
DOIdoi:10.1063/1.3168646Search in ResearchGate
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Mindat Ref. ID8575401Long-form Identifiermindat:1:5:8575401:4
GUID0
Full ReferenceKazazis, D., Jannaty, P., Zaslavsky, A., Le Royer, C., Tabone, C., Clavelier, L., Cristoloveanu, S. (2009) Tunneling field-effect transistor with epitaxial junction in thin germanium-on-insulator. Applied Physics Letters, 94 (26). 263508pp. doi:10.1063/1.3168646
Plain TextKazazis, D., Jannaty, P., Zaslavsky, A., Le Royer, C., Tabone, C., Clavelier, L., Cristoloveanu, S. (2009) Tunneling field-effect transistor with epitaxial junction in thin germanium-on-insulator. Applied Physics Letters, 94 (26). 263508pp. doi:10.1063/1.3168646
In(2009, June) Applied Physics Letters Vol. 94 (26) AIP Publishing

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Zaslavsky, A., Soliveres, S., Le Royer, C., Cristoloveanu, S., Clavelier, L., Deleonibus, S. (2007) Negative transconductance in double-gate germanium-on-insulator field effect transistors. Applied Physics Letters, 91 (18). 183511pp. doi:10.1063/1.2802074
Wan, J., Le Royer, C., Zaslavsky, A., Cristoloveanu, S. (2011) A tunneling field effect transistor model combining interband tunneling with channel transport. Journal of Applied Physics, 110 (10). 104503pp. doi:10.1063/1.3658871
Wan, J., Le Royer, C., Zaslavsky, A., Cristoloveanu, S. (2010) Low-frequency noise behavior of tunneling field effect transistors. Applied Physics Letters, 97 (24). 243503pp. doi:10.1063/1.3526722
Aydin, C., Zaslavsky, A., Luryi, S., Cristoloveanu, S., Mariolle, D., Fraboulet, D., Deleonibus, S. (2004) Lateral interband tunneling transistor in silicon-on-insulator. Applied Physics Letters, 84 (10). 1780-1782 doi:10.1063/1.1668321
Zaslavsky, A., Aydin, C., Luryi, S., Cristoloveanu, S., Mariolle, D., Fraboulet, D., Deleonibus, S. (2003) Ultrathin silicon-on-insulator vertical tunneling transistor. Applied Physics Letters, 83 (8). 1653-1655 doi:10.1063/1.1600832
Le, Son T., Jannaty, P., Zaslavsky, A., Dayeh, S. A., Picraux, S. T. (2010) Growth, electrical rectification, and gate control in axial in situ doped p-n junction germanium nanowires. Applied Physics Letters, 96 (26). 262102pp. doi:10.1063/1.3457862
Preisler, E. J., Guha, S., Perkins, B. R., Kazazis, D., Zaslavsky, A. (2005) Ultrathin epitaxial germanium on crystalline oxide metal-oxide-semiconductor-field-effect transistors. Applied Physics Letters, 86 (22). 223504pp. doi:10.1063/1.1941451
Ionica, I., Savin, I., Van Den Daele, W., Nguyen, T., Mescot, X., Cristoloveanu, S. (2009) Characterization of silicon-on-insulator films with pseudo-metal-oxide-semiconductor field-effect transistor: Correlation between contact pressure, crater morphology, and series resistance. Applied Physics Letters, 94 (1). 12111pp. doi:10.1063/1.3030987
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Diab, A., Pirro, L., Ionica, I., Mescot, X., Ghibaudo, G., Cristoloveanu, S. (2012) Low-temperature pseudo-metal-oxide-semiconductor field-effect transistor measurements on bare silicon-on-insulator wafers. Applied Physics Letters, 101 (9). 92110pp. doi:10.1063/1.4748984
Kazazis, D., Guha, S., Bojarczuk, N. A., Zaslavsky, A., Kim, H.-C. (2009) Substrate Fermi level effects in photocatalysis on oxides: Properties of ultrathin TiO2/Si films. Applied Physics Letters, 95 (6). 64103pp. doi:10.1063/1.3196314
 
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