Vote for your favorite mineral in #MinCup25! - Calcite vs. Perovskite
This match of heavy hitters is bound to end in heartbreak as classic calcite faces off against futuristic perovskite.
Log InRegister
Quick Links : The Mindat ManualThe Rock H. Currier Digital LibraryMindat Newsletter [Free Download]
Home PageAbout MindatThe Mindat ManualHistory of MindatCopyright StatusWho We AreContact UsAdvertise on Mindat
Donate to MindatCorporate SponsorshipSponsor a PageSponsored PagesMindat AdvertisersAdvertise on Mindat
Learning CenterWhat is a mineral?The most common minerals on earthInformation for EducatorsMindat ArticlesThe ElementsThe Rock H. Currier Digital LibraryGeologic Time
Minerals by PropertiesMinerals by ChemistryAdvanced Locality SearchRandom MineralRandom LocalitySearch by minIDLocalities Near MeSearch ArticlesSearch GlossaryMore Search Options
Search For:
Mineral Name:
Locality Name:
Keyword(s):
 
The Mindat ManualAdd a New PhotoRate PhotosLocality Edit ReportCoordinate Completion ReportAdd Glossary Item
Mining CompaniesStatisticsUsersMineral MuseumsClubs & OrganizationsMineral Shows & EventsThe Mindat DirectoryDevice SettingsThe Mineral Quiz
Photo SearchPhoto GalleriesSearch by ColorNew Photos TodayNew Photos YesterdayMembers' Photo GalleriesPast Photo of the Day GalleryPhotography

Wan, J., Le Royer, C., Zaslavsky, A., Cristoloveanu, S. (2010) Low-frequency noise behavior of tunneling field effect transistors. Applied Physics Letters, 97 (24). 243503pp. doi:10.1063/1.3526722

Advanced
   -   Only viewable:
Reference TypeJournal (article/letter/editorial)
TitleLow-frequency noise behavior of tunneling field effect transistors
JournalApplied Physics Letters
AuthorsWan, J.Author
Le Royer, C.Author
Zaslavsky, A.Author
Cristoloveanu, S.Author
Year2010 (December 13)Volume97
Issue24
PublisherAIP Publishing
DOIdoi:10.1063/1.3526722Search in ResearchGate
Generate Citation Formats
Mindat Ref. ID8589030Long-form Identifiermindat:1:5:8589030:7
GUID0
Full ReferenceWan, J., Le Royer, C., Zaslavsky, A., Cristoloveanu, S. (2010) Low-frequency noise behavior of tunneling field effect transistors. Applied Physics Letters, 97 (24). 243503pp. doi:10.1063/1.3526722
Plain TextWan, J., Le Royer, C., Zaslavsky, A., Cristoloveanu, S. (2010) Low-frequency noise behavior of tunneling field effect transistors. Applied Physics Letters, 97 (24). 243503pp. doi:10.1063/1.3526722
In(2010, December) Applied Physics Letters Vol. 97 (24) AIP Publishing

See Also

These are possibly similar items as determined by title/reference text matching only.

Wan, J., Le Royer, C., Zaslavsky, A., Cristoloveanu, S. (2011) A tunneling field effect transistor model combining interband tunneling with channel transport. Journal of Applied Physics, 110 (10). 104503pp. doi:10.1063/1.3658871
Zaslavsky, A., Soliveres, S., Le Royer, C., Cristoloveanu, S., Clavelier, L., Deleonibus, S. (2007) Negative transconductance in double-gate germanium-on-insulator field effect transistors. Applied Physics Letters, 91 (18). 183511pp. doi:10.1063/1.2802074
Kazazis, D., Jannaty, P., Zaslavsky, A., Le Royer, C., Tabone, C., Clavelier, L., Cristoloveanu, S. (2009) Tunneling field-effect transistor with epitaxial junction in thin germanium-on-insulator. Applied Physics Letters, 94 (26). 263508pp. doi:10.1063/1.3168646
Wan, J., Zaslavsky, A., Cristoloveanu, S. (2015) Comment on “Investigation of tunnel field-effect transistors as a capacitor-less memory cell” [Appl. Phys. Lett. 104, 092108 (2014)]. Applied Physics Letters, 106 (1). 16101pp. doi:10.1063/1.4905448
Hauf, M. V., Hess, L. H., Howgate, J., Dankerl, M., Stutzmann, M., Garrido, J. A. (2010) Low-frequency noise in diamond solution-gated field effect transistors. Applied Physics Letters, 97 (9). 93504pp. doi:10.1063/1.3483769
Xu, Y., Minari, T., Tsukagoshi, K., Gwoziecki, R., Coppard, R., Balestra, F., Chroboczek, J. A., Ghibaudo, G. (2010) Extraction of low-frequency noise in contact resistance of organic field-effect transistors. Applied Physics Letters, 97 (3). 33503pp. doi:10.1063/1.3467057
Zaslavsky, A., Aydin, C., Luryi, S., Cristoloveanu, S., Mariolle, D., Fraboulet, D., Deleonibus, S. (2003) Ultrathin silicon-on-insulator vertical tunneling transistor. Applied Physics Letters, 83 (8). 1653-1655 doi:10.1063/1.1600832
Wu, J. W., You, J. W., Ma, H. C., Cheng, C. C., Chang, C. S., Huang, G. W., Wang, T. (2004) Valence-band tunneling induced low frequency noise in ultrathin oxide (15Å) n-type metal-oxide-semiconductor field effect transistors. Applied Physics Letters, 85 (21). 5076-5077 doi:10.1063/1.1827930
Aydin, C., Zaslavsky, A., Luryi, S., Cristoloveanu, S., Mariolle, D., Fraboulet, D., Deleonibus, S. (2004) Lateral interband tunneling transistor in silicon-on-insulator. Applied Physics Letters, 84 (10). 1780-1782 doi:10.1063/1.1668321
Klüpfel, F. J., von Wenckstern, H., Grundmann, M. (2015) Low frequency noise of ZnO based metal-semiconductor field-effect transistors. Applied Physics Letters, 106 (3). 33502pp. doi:10.1063/1.4906292
Palmour, J. W., Levinshtein, M. E., Rumyantsev, S. L., Simin, G. S. (1996) Low‐frequency noise in 4H–silicon carbide junction field effect transistors. Applied Physics Letters, 68 (19). 2669-2671 doi:10.1063/1.116276
 
and/or  
Mindat.org is an outreach project of the Hudson Institute of Mineralogy, a 501(c)(3) not-for-profit organization.
Copyright © mindat.org and the Hudson Institute of Mineralogy 1993-2025, except where stated. Most political location boundaries are © OpenStreetMap contributors. Mindat.org relies on the contributions of thousands of members and supporters. Founded in 2000 by Jolyon Ralph.
To cite: Ralph, J., Von Bargen, D., Martynov, P., Zhang, J., Que, X., Prabhu, A., Morrison, S. M., Li, W., Chen, W., & Ma, X. (2025). Mindat.org: The open access mineralogy database to accelerate data-intensive geoscience research. American Mineralogist, 110(6), 833–844. doi:10.2138/am-2024-9486.
Privacy Policy - Terms & Conditions - Contact Us / DMCA issues - Report a bug/vulnerability Current server date and time: September 4, 2025 07:07:55
Go to top of page